Semiconductor device

ABSTRACT

Described herein is a stacked package according to the present invention, wherein a plurality of tape carriers which seal semiconductor chips, are multilayered in upward and downward directions. In the stacked package, one ends of leads formed over the whole surfaces of each tape carrier are electrically connected to their corresponding connecting terminals of the semiconductor chip. Other ends of the leads are electrically connected to their corresponding through holes defined in the tape carrier. Connecting terminals common to the plurality of semiconductor chips are formed at the same places of the plurality of tape carriers and withdrawn to the same external connecting terminals through a plurality of mutually-penetrated through holes.

TECHNICAL FIELD

The present invention relates to a semiconductor device wherein aplurality of types of semiconductor chips are held in a single packagefrom an MCM (Multi Chip Module)-based approach so that signals can beinputted thereto and outputted therefrom with respect to each other, andparticularly to a technique effective for application to a semiconductordevice wherein a microcomputer including a CPU (Central ProcessingUnit), a programmable non-volatile memory such as a flash memory or thelike, a DRAM (Dynamic Random Access Memory), and a logic LSI such as anASIC (Application Specific Integrated Circuit) or the like are broughtinto one package.

BACKGROUND ART

The present inventors have discussed a technique wherein in asemiconductor device about a system on-chip, a plurality of types ofsemiconductor chips are accommodated or held in a single package so asto be able to input signals thereto and output the same therefrom withrespect to each other from an MCM-based approach without bringing all ofa microcomputer, a flash memory, a DRAM, an ASIC, etc. into one chipupon implementation of an approach to a DRMA/SIMM (Single In-line memoryModule) having the high needs of users and a flash memory/DRAM-basedmicrocomputer on-chip. The following is the corresponding techniquediscussed by the present inventors. Its summary is as follows:

A move attempt to form a microcomputer, a flash memory, a DRAM, an ASIC,etc. on one chip thereby to achieve the speeding up of a data transferrate, space saving (improvements in packing density), low powerconsumption, etc. has recently been made active in front end technologysuch as a multimedia, information communications, etc. However, theformation of such many kinds of LSIs on one chip will cause an extremeincrease in the load on a semiconductor manufacturing process.

This reason will be described below based on a process for placing orforming the microcomputer, flash memory, DRAM and ASIC in mixed form,which has been discussed by the present inventors. A summary of themixed-loading process is as follows:

A p-type impurity (boron) is ion-implanted in a principal surface of asemiconductor substrate 100 to form a p well 101 as shown in FIG. 78.Thereafter, a field oxide film 102 is formed over the surface of the pwell 101 by a LOCOS method. An element or device formed at the left endin the drawing is a MOSFET which constitutes each memory cell of a DRAM,devices formed at a position adjacent to the right side are a MOSFETwhich constitutes each memory cell of a flash memory and a MOSFET for ahigh voltage, which constitutes part of a peripheral circuit of theflash memory. A device formed at the right end is a MOSFET whichconstitutes a logic LSI such as a microcomputer, an ASIC or the like.Incidentally, an actual LSI is comprised principally of an n channelMOSFET and a p channel MOSFET. However, only a region for forming the nchannel MOSFET will be illustrated to simplify its description.

Next, a tunnel oxide film 103 for the flash memory is formed as shown inFIG. 79. The thickness of the tunnel oxide film 103 is set so as torange from about 8 nm to 13 nm.

Next, as shown in FIG. 80, a polycrystal silicon film deposited on thesemiconductor substrate 100 by CVD is subjected to patterning to form afloating gate 104 (part thereof) for the flash memory. Thereafter, asilicon oxide film, a silicon nitride film and a silicon oxide film arelayered over the floating gate 104 as shown in FIG. 81 thereby to form asecond insulating film (ONO film) 105 whose thickness ranges from about10 nm to 30 nm.

Next, a gate oxide film 106 for the MOSFET which withstands a highvoltage, is formed in a peripheral circuit region of the flash memory asshown in FIG. 82.

The gate oxide film 106 is formed to a thickness (which ranges from 10nm to 30 nm) thicker than the thicknesses of gate oxide films for otherMOSFETs.

Next, a gate oxide film 107 for the MOSFET which constitutes the logicLSI, and a gate oxide film 130 for the MOSFET which constitutes eachmemory cell for DRAM, are formed as shown in FIG. 83. The thickness ofthe gate oxide film 107 is set so as to range from about 4 nm to 10 nm,whereas the thickness of the gate oxide film 130 is set so as to rangefrom about 8 nm to 15 nm.

Next, as shown in FIG. 84, the polycrystal silicon film deposited overthe semiconductor substrate 100 by CVD is subjected to patterningthereby to simultaneously form gate electrodes (word lines) for eachindividual memory cells of the DRAM, a control gate 109 for the flashmemory, a gate electrode 110 for the high-withstand MOSFET, a gateelectrode 111 for the MOSFET which constitutes the logic LSI.Thereafter, the (partly-formed) floating gate 104 for the flash memoryis subjected to patterning to form a floating gate 104 as shown in FIG.85.

Next, n-type impurities (phosphorus and arsenic) are ion-implanted inpart of a memory cell region of the flash memory as shown in FIG. 86 toform an n⁺-type semiconductor region 112 for the flash memory.Thereafter, the n-type impurities (phosphorus and arsenic) areion-implanted in part of the memory cell region of the flash memory, theperipheral circuit region thereof and a logic LSI forming region asshown in FIG. 87 thereby to simultaneously form n⁻-type semiconductorregions 113 and 113 for the flash memory, n⁻-type semiconductor regions113 and 113 for the high-withstand MOSFET, and n⁻-type semiconductorregions 113 and 113 for the MOSFET which constitutes the logic LSI.

Next, as shown in FIG. 88, side wall spacers 114 are respectively formedover the side walls of the gate electrodes (word lines) 108 for eachindividual memory cells of DRAM, the control gate 109 for the flashmemory, the gate electrode 110 for the MOSFET for a high voltage, andthe gate electrode 111 for the MOSFET which constitutes the logic LSI.

Next, the n-type impurities (phosphorus and arsenic) are ion-implantedin part of the memory cell region of the flash memory, the peripheralcircuit region and the logic LSI forming region as shown in FIG. 89 tosimultaneously form an n⁺-type semiconductor region 115 for the flashmemory, n⁺-type semiconductor regions 115 and 115 for the high-withstandMOSFET, and n⁺-type semiconductor regions 115 and 115 for the MOSFETwhich constitutes the logic LSI, whereby one of a source region and adrain region for the flash memory, a source region and a drain regionfor the high-withstand MOSFET, and a source region and a drain regionfor the MOSFET constituting the logic LSI are brought to an LDD (LightlyDoped Drain) structure.

Next, as shown in FIG. 90, a silicon oxide film 116 deposited over thesemiconductor substrate 100 by CVD is etched to define connecting holeson both sides of the gate electrodes (word lines) of the DRAM and definea connecting hole in an upper portion of the n⁺-type semiconductorregion 112 for the flash memory. Thereafter, plugs 117 each composed ofa polycrystal silicon film are formed inside these connecting holes. Onboth sides of the gate electrodes of the DRAM, n-type semiconductorregions 118 are formed by impurities diffused from the polycrystalsilicon film. Thereafter, the polycrystal silicon film deposited overthe silicon oxide film 116 by CVD is subjected to patterning to formeach bit line BL for the DRAM and each bit line BL for the flash memory.

Next, a silicon oxide film 119 is deposited over the semiconductorsubstrate 100 by CVD as shown in FIG. 91. Thereafter, a polycrystalsilicon film deposited over the silicon oxide film 119 is subjected topatterning to form lower electrodes 120 of capacitors for the DRAM.

A tantalum oxide film (or nitride silicon film) and the polycrystalsilicon film deposited over the semiconductor substrate 100 arepatterned to form an capacitive insulating film 121 and an upperelectrode 122 of each capacitor for the DRAM as shown in FIG. 92.

Thereafter, a silicon oxide film 123 is deposited over the semiconductorsubstrate 100 by CVD as shown in FIG. 93. An Al film deposited over thesilicon oxide film 123 is subjected to patterning to form metal wires orinterconnections 124 as a first layer. Afterwards, a silicon oxide film125 is deposited over the semiconductor substrate 100 by CVD as shown inFIG. 94. Thereafter, an Al film deposited over the silicon oxide film125 is subjected to patterning to form metal interconnections 126 as asecond layer.

The above description is the summary of the process for forming themicrocomputer, flash memory, DRAM and ASIC in mixed form.

According to the discussions of the present inventors, theabove-described process has the following problems.

(1) The attainment of the speeding up of a logic unit needs to shorten agate length of each MOSFET and thin the thickness of a gate oxide film.On the other hand, it is necessary to make the thickness of a gate oxidefilm of each MOSFET for a DRAM thicker than that of a gate oxide film ofeach MOSFET for the logic unit to some extent in consideration of awithstand voltage or high voltage. Further, a gate oxide film of eachhigh-withstand MOSFET for a flash memory to which a high voltage isapplied, needs to have a thicker thickness in order to ensure asufficient withstand voltage. That is, when the DRAM, logic and flashmemory are placed in mixed form, it is necessary to provide gate oxidefilms having thicknesses which vary according to required power levels.Therefore, the number of process steps and the number of masks increaseby a large amount.

(2) When a DRAM is comprised of one transistor+one capacitor, ahigh-temperature heat treatment (corresponding to heat treatment forstabilizing the tantalum oxide film or high-temperature nitridingtreatment) is taken upon formation of the capacitor. It is thereforenecessary to set the gate length at the logic unit longer more or less.However, when the gate length at the logic unit is made longer, thespeeding up of the logic unit will fall a sacrifice.

(3) Since the height of the DRAM on the semiconductor chip is higherthan the logic unit and there is a step-like offset between the two,this exerts a bad influence on wiring formation. This tendency becomespronounced in the case of a DRAM which adopts a stacked capacitor(Stacked Capacitor) structure in particular.

Thus, when one attempts to achieve one chip while the respectiveperformance of the DRAM, logic, and flash memory are being maintainedtogether, the number of process steps and the number of masks greatlyincrease. Alternatively, a mixed-loading process suitable for theachievement of one chip must be developed again. Even in either case,the manufacturing cost greatly increases.

There is also a strong demand for the loading of both a flash memory anda DRAM into a microcomputer system including a CPU even from a circuitalstandpoint based on a functional block configuration in addition to theabove-described manufacturing process-based cost analysis. When thepackageability to a built-in apparatus is taken into consideration, theintegration of the two types of semiconductor chips comprised of theflash memory and DRAM into one package is indispensable. Therefore, thepresent inventors have thought that a decrease in the number of externalconnecting terminals and a reduction in the packing area due to theintegration of a plurality of types of semiconductor chips into onepackage could be achieved by assigning signals used in common to themutual semiconductor chips to common external connecting terminalsrespectively, and the costdown to the microcomputer System could beachieved even from the circuital standpoint.

An object of the present invention is to provide a semiconductor devicewherein in a package structure of a type wherein two types ofsemiconductor chips corresponding to a CPU and a flash memory, and aDRAM are integrated or combined into one package, a decrease in thenumber of external connecting terminals and a reduction in the packingarea due to the integration of the two types of semiconductor chips intoone package can be achieved even from a circuital standpoint based on afunctional block configuration, and the costdown to a microcomputersystem can be achieved.

Another object of the present invention is to provide a semiconductordevice wherein when a DRAM is set as a synchronous DRAM where a logiccircuit such as an ASIC or the like is incorporated into respectivesemiconductor chips, external connecting terminals can be further madecommon, thereby making it possible to provide a much further reductionin the number of external connecting terminals and achieve the costdownthereto.

A further object of the present invention is to provide theabove-described semiconductor device at low cost.

When two types of semiconductor chips corresponding to a so-called flashmemory-equipped microcomputer, which is equipped with a CPU and a flashmemory, for example, and a semiconductor chip referred to as so-calledDRAM on-chip logic, which is equipped with a DRAM and a logic circuitsuch as an ASIC or the like are considered in the above-describedmicrocomputer system, it is essential that countermeasures against theoperation between the flash memory-equipped microcomputer and the DRAMon-chip logic should be taken. In other words, it is necessary to takecountermeasures against data transfer rates with respect to an accessoperation to the DRAM of the DRAM on-chip logic from the flashmemory-equipped microcomputer and an access operation to the DRAM fromthe logic circuit inside the DRAM on-chip logic.

When it is desired to connect between the semiconductor chipsrespectively corresponding to the aforementioned flash memory-equippedmicrocomputer and DRAM on-chip logic at high speed, for example, theycan be connected to each other at high speed by using an interfacedirectly coupled to the DRAM. However, if the logic circuit of the DRAMon-chip logic desires to access the DRAM, then there is known, as afirst method, a method of sending a wait signal back to the CPU when thelogic circuit is in operation. Since the present method must use anasynchronous memory as a memory to be handled between the flashmemory-equipped microcomputer and the DRAM on-chip logic, the transferof data in one clock cycle cannot be performed, i.e., the transfer ofdata in two-clock cycle is performed because the time required to reador recognize the wait signal cannot be taken or spent.

As a second method capable of implementing one clock cycle, may bementioned a method of allowing the flash memory-equipped microcomputerto perform bus arbitration in the on-chip logic itself. According tothis method, since the logic circuit of the DRAM on-chip logic outputs arequest signal for making a request to the CPU for a bus release and theCPU cannot do anything during a period in which a bus is set free to thelogic circuit, the present method will cause a malfunction orinconvenience that overheads of the arbitration increase and the CPUitself cannot perform time-based control.

Therefore, the present inventors have focused attention on the fact thatthe time may preferably be controlled by the CPU itself of the flashmemory-equipped microcomputer. The present inventors thought from suchattention that a self-refresh period of the DRAM as viewed from theflash memory-equipped microcomputer was effectively used to therebyallow a self-refresh operation of the DRAM, and an access operation tothe DRAM from the logic circuit lying inside the DRMA on-chip logic wasmade possible during this self-refresh period, whereby the transfer ofdata between the flash memory-equipped microcomputer and the DRAMon-chip logic could be achieved at high speed.

One object of the present invention is to provide a semiconductor devicewherein in semiconductor chips each equipped with a DRAM and a logiccircuit such as an ASIC or the like, the need for wait control iseliminated and a self-refresh period of the DRAM as viewed from theoutside is effectively used to thereby allow an access operation to theDRAM from the logic circuit during this self-refresh period, whereby thespeeding up of the transfer of data between the outside and eachsemiconductor chip can be implemented.

The present invention also provides a semiconductor device wherein evenin the case of a package structure in which two types of chipscorresponding to a semiconductor chip equipped with a DRAM and a logiccircuit and a semiconductor chip equipped with a CPU and a flash memoryare combined into one package, wait control is made unnecessary and anaccess operation to the DRAM from the logic circuit is made possibleduring a self-refresh period of the DRAM as viewed from the CPU, wherebythe speeding up of the transfer of data between the semiconductor chipscan be implemented.

Further, the present invention provides a semiconductor device capableof facilitating the creation of programs since wait control used toperform wait-signal exchanges becomes unnecessary and timing itselfprovided for processing can be controlled from a CPU.

Moreover, the present invention provides a semiconductor device whereinthe use of a general-purpose DRAM interface makes it possible todirectly connect a semiconductor chip equipped with a DRAM and a logiccircuit and a semiconductor chip equipped with a CPU and a flash memoryto one another so that they are operable at high speed.

The above and other objects of the present invention and novel featuresthereof will become apparent from the following description of thepresent specification and the accompanying drawings.

DISCLOSURE OF THE INVENTION

Summaries of typical ones of the inventions disclosed in the presentapplication will be described in brief as follows:

That is, the present invention provides one semiconductor devicecomprising a stacked package in which a plurality of tape carriers whichseal a plurality of semiconductor chips, are stacked on one another inupward and downward directions, and wherein connecting terminals sharedbetween the plurality of semiconductor chips are drawn to the sameexternal connecting terminals of the stacked package through conductivelayers formed in the tape carriers.

The present invention provides another semiconductor device wherein oneends of leads formed over the whole surface of each tape carrierreferred to above are respectively electrically connected to connectingterminals of each semiconductor chip referred to above, the other endsof the leads are respectively electrically connected to through holesdefined in each tape carrier, and the connecting terminals common to theplurality of semiconductor chips are formed at the same positions of theplurality of tape carriers and withdrawn to the same external connectingterminals via a plurality of mutually-penetrated through holes.

The present invention provides a further semiconductor device whereinthe external connecting terminals are solder bumps formed at one ends ofthe through holes of the tape carrier corresponding to the lowest layer.

The present invention provides a still further semiconductor devicewherein the external connecting terminals are formed over the wholesurface of the tape carrier corresponding to the lowest layer and oneends thereof are leads which protrude to the outside of the tapecarrier.

The present invention provides a still further semiconductor devicewherein the external connecting terminals include some used asconductive pins, which are inserted into the through holes and othersused as conductive pins, which protrude to the outside of the tapecarrier.

The present invention provides a still further semiconductor devicewherein one ends of the leads formed over the whole surface of each tapecarrier referred to above are electrically connected to the connectingterminals of each semiconductor chip referred to above and the otherends of the leads protrude to the outside of each tape carrier so as toform the external connecting terminals, and a plurality of leadswithdrawn from the connecting terminals common to the plurality ofsemiconductor chips are superimposed on one another in the outside ofeach tape carrier to thereby form common external connecting terminals.

The present invention provides a still further semiconductor devicewherein one ends of the leads formed over the whole surface of each tapecarrier referred to above are electrically connected to the connectingterminals of each semiconductor chip referred to above and the otherends of the leads protrude to the outside of each tape carrier so as toform the external connecting terminals, and a plurality of leadswithdrawn from the connecting terminals common to the plurality ofsemiconductor chips are joined onto common electrodes of a mountingsubstrate.

The above and other objects of the present invention and novel featuresthereof will become apparent from the following description of thepresent specification and the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 through 6 are respectively schematic block diagrams showingexamples of configurations of a semiconductor device according to anembodiment of the present invention;

FIGS. 7 through 14 are respectively functional block diagrams showingexamples of internal configurations of semiconductor chips constitutingthe semiconductor device according to the embodiment of the presentinvention and are explanatory diagrams illustrating examples of terminalfunctions thereof;

FIGS. 15 through 18 are explanatory diagram depicting tables indicativeof examples of terminal functions of each semiconductor chip;

FIGS. 19 and 20 are respectively connection diagrams showing examples ofconnections between the semiconductor chips;

FIG. 21 is a block diagram schematically illustrating an example of theinternal function of each semiconductor chip;

FIG. 22 is a block diagram depicting a detailed example of a DRAM accesscontroller;

FIG. 23 is an explanatory diagram showing examples of transient statesof operation modes employed in an internal control signal generator;

FIG. 24 is an operation timing chart depicting an example illustrativeof control of the DRAM access controller over a DRAM;

FIG. 25 is an overall perspective view of a package showing anembodiment of the present invention;

FIG. 26 is a cross-sectional view of the package shown in FIG. 25;

FIGS. 27 and 28 are respectively showing patterns of leads formed overthe whole surfaces of tape carriers;

FIGS. 29 through 37 are respectively cross-sectional views illustratinga method of manufacturing a semiconductor device according to anembodiment of the present invention;

FIGS. 38, 39, 41, 44, 48-50(a-b) through 66 are respectivelycross-sectional views depicting another method of manufacturing thesemiconductor device;

FIGS. 67 through 69 are respectively plan views showing patterns ofleads formed over the whole surfaces of tape carriers;

FIGS. 70 through 72 are respectively cross-sectional views illustratingother embodiments of the semiconductor device;

FIGS. 72 through 76 are respectively functional block diagrams showingan example of a system configuration using the semiconductor deviceaccording to the present embodiment; and

FIGS. 78 through 94 are respectively cross-sectional views illustratinga process for mixing a microcomputer, a flash memory, a DRAM and an ASICtogether, which has been discussed by the present inventors.

BEST MODE FOR CARRYING OUT THE INVENTION

Preferred embodiments of the present invention will hereinafter bedescribed in detail with reference to the accompanying drawings. Partsor components having the same functions in all the drawings fordescribing the embodiments are identified by the same reference numeralsand their repetitive description will be omitted.

An example of a configuration of a semiconductor device according to thepresent embodiment will first be explained with reference to FIGS. 1through 6.

The semiconductor device according to the present embodiment is an LSIpackage having a stacked or multilayered structure in which a pluralityof types of semiconductor chips are connected to one another so thatsignals can be inputted to and outputted therefrom. As shown in FIG. 1as one example of its configuration, the semiconductor device comprisesa chip MF (first semiconductor chip) referred to as a so-called flashmemory-mounted microcomputer, which is equipped with a microcomputer Mincluding a CPU, a memory and peripheral circuits, etc. and a flashmemory F, and a chip AD (second semiconductor chip) referred to asso-called DRAM on-chip logic, which is equipped with a DRM D and a logiccircuit A such as ASIC or the like. Connecting terminals of therespective chips MF and AD are electrically connected to one anotherthrough a bus inside the package and electrically connected to externalconnecting terminals allowing connections with the outside.

Now, the flash memory F is a programmable non-volatile memorycorresponding to one LSI memory. This flash memory is a memory forperforming writing or erasing according to the application of a highvoltage to each memory cell. The DRAM D is a memory corresponding to oneLSI memory, which has the necessity for supplying a control (refresh)signal for reproduction of repetitive data with a view toward holdingthe contents of data. Further, the ASIC is an IC designed for specialpurposes or a dedicated IC. This is an LSI developed and sold forspecial devices, which is different from a general-purpose LSI sold onthe general market as in the case of a large-capacity memory LSI and amicroprocessor LSI.

As shown in FIG. 2 as another example of configuration, thesemiconductor device comprises a chip MF (first semiconductor chip)equipped with a microcomputer M including a CPU, a memory and peripheralcircuits or the like and a flash memory F, and a chip D (secondsemiconductor chip) equipped with a DRAM D alone. The present exampletakes a configuration in which the logic circuit A such as ASIC or thelike is eliminated from the second semiconductor chip in the configuredexample shown in FIG. 1.

Further, as shown in FIG. 3 as a further example of configuration, thepresent semiconductor device comprises a chip MFA (first semiconductorchip) referred to as a so-called flash memory-mounted on-chip logicmicrocomputer, which is equipped with a microcomputer M including a CPU,a memory and peripheral circuits or the like, a flash memory F and alogic circuit A, and a chip D (second semiconductor chip) equipped witha DRAM D alone. The present example takes a configuration in which thefirst semiconductor chip in the configured example shown in FIG. 2 isequipped with the logic circuit A such as ASIC or the like.

In addition to the above, the present semiconductor device can takevarious configurations as in the cases where, for example, it comprisesa chip MFA and a chip AD as shown in FIG. 4 as a modification of FIG. 1by way of example in addition to the above, it comprises one chip MF anda plurality of chips D as shown in FIG. 5 as a modification of FIG. 2,and it comprises a chip MFA and a plurality of chips D as shown in FIG.6 as a modification of FIG. 3.

In the above-described configured examples of the semiconductor device,which respectively comprise combinations of the chip MF+the chip AD, thechip MF+the chip D, the chip MF+the chip D, the chip MFA+the chip AD,the chip MF+the chip D (expansion) and the chip MFA+the chip D(expansion), the microcomputers M, flash memories F, DRAMs D, logiccircuits A, etc. contained in the respective chips comprise similarfunctional blocks even if the chips are different from one another inconfiguration.

The chips AD and D are easy to be directly connected to the chips MF andMFA owing to general-purpose DRAM interface specifications. DRAMs D areused as expansion memories in their corresponding semiconductor devices.Further, the logic circuit A such as ASIC of the chip AD is capable ofperforming access control over DRAM D inside the chip AD independent ofaccess control by CPU of the chip MFA.

Summaries of the respective semiconductor chips will now be explainedwith reference to FIGS. 7 through 14. In particular, the chip MF, thechip AD and the chip D will be described in order. FIGS. 15 through 18respectively show tables or lists illustrative of examples of terminalfunctions of the chip MF.

FIGS. 7 and 8 respectively show an example illustrative of 144 pinsemployed in the chip MF. FIG. 7 is a functional block diagram showing anexample of an internal configuration of the chip MF, and FIG. 8 is anexplanatory view showing an example illustrative of terminal functions,respectively. FIGS. 9 and 10 respectively show an example illustrativeof 112 pins employed in the chip MF. FIG. 9 is a functional blockdiagram showing an example of an internal configuration of the chip MF,and FIG. 10 is an explanatory view showing an example illustrative ofterminal functions, respectively. Incidentally, the chip MF having the144 pins is different from the chip MF having the 112 pins in that datainput/output external terminals are respectively different from oneanother at D0 through D31 and D0 through D15 in association with 32-bitand 16-bit data widths. The chip MF having the 144 pins will beprincipally explained here.

The chip MF having the 144 pins takes a circuit configuration formedwith at least a microcomputer and a flash memory and having an overallcontrol/processing function of a semiconductor device and anelectrically batch or one-time erasable programmable function. As shownin FIG. 7 by way of example, the chip MF comprises a processor CPU, aflash memory Flash, a random access memory/cache memory RAM/Cache, adata transfer controller DTC, a direct memory access controller DMAC, abus state controller BSC, a user break controller UBC, an interruptcontroller INTC, a serial communication interface SCI, a multi-functiontimer pulse unit MTU, a compare match timer CMT, an A/D converter A/D, awatchdog timer WDT, a phase-locked loop circuit PLL, etc.

The processor CPU is a central processing unit having a RISC typecommand or instruction set, for example. Since the CPU operates onone-instruction/one-cycle basis, its instruction execution speed isgreatly improved. Further, the CPU takes an internal 32-bitconfiguration and has enhanced data throughput. As CPU's features, theCPU is provided with various functions such as a general-purposeregister machine (general-purpose register: 32 bits×16, controlregister: 32 bits×3 and system register: 32 bits×4), a RISCcorresponding instruction set (improvements in code efficiency based ona 16-bit fixed length defined as an instruction length, load storearchitecture (basic arithmetic operation being executed betweenregisters), a reduction in disturbance of a pipeline at branch-off dueto the adoption of a delay branch instruction, a C language-orientedinstruction set), an instruction execution time corresponding to oneinstruction/one cycle (35 ns/instruction upon 28 MHz-based operation),an address space given as 4 GB on the architecture, an execution of32×32→64 multiplication in 2 to 4 cycles and an execution of 32×32+64→64sum-of-product arithmetic operation in 2 to 4 cycles with a built-inmultiplier, a 5-stage pipeline system, etc.

The flash memory Flash is a circuit having, for example, a 64 K-byte or128 K-byte electrically one-time erasable programmable memoryincorporated therein. The flash memory Flash is electrically connectedto the CPU, DMAC and DTC through a data bus having a 32-bit width, forexample. The CPU, DMAC and DTC can access the flash memory Flash with 8,16 or 32-bit width. Data held in the flash memory Flash can be accessedin one state at all times.

The random access memory/cache memory RAM/Cache is a memory whichcomprises, for example, a 4 KB random access memory RAM and a 1 KB cachememory Cache. As features of the present Cache, the Cache is providedwith various functions that, for example, an instruction code and a PCrelative read/data caching are executed, a line length is 4 bytes (onelong word: 2 instruction lengths), cache tags are given as 256 entries,a direct map method, a built-in ROM/RAM and a built-in I/O area are notintended for cache and also used for a built-in RAM, 2 KB of thebuilt-in RAM is used for an address array/data array upon cacheenabling.

The data transfer controller DTC is a circuit started up by aninterruption or software and capable of performing data transfer. AsDTC's features, the DTC is provided with various functions that, forexample, each data transfer independent of the CPU can be performedaccording to a peripheral I/O interrupt request, transfer modes can beset every interrupt factors (each transfer mode can be set onto thecorresponding memory), a plurality of data transfers can be made to onestart-up factor, an abundance of transfer modes (normal mode/repeatmode/block transfer mode) can be selected, a transfer unit can be set tobyte/word/long word, an interrupt to start up the DTC is required of theCPU (an interrupt to the CPU can be produced after the completion of onedata transfer and an interrupt to the CPU can be generated after thecompletion of all the designated or specified data transfers), and thestart-up of each transfer can be performed by software. With respect toan address space, a transfer-source address and a transfer-destinationaddress can be both specified by 32 bits. With respect to each deviceintended for transfer, data transfers are effected on a flash memoryFlash serving as a built-in memory, a RAM/Cache, an external memory,built-in peripheral circuits, etc.

The direct memory access controller DMAC is a circuit which comprises 4channels, for example and is capable of performing transfers of databetween an external device with a DACK (transfer request reception oracknowledge signal), an external memory, a memory-mapped external deviceand built-in peripheral circuits (except for DMAC, BSC and UBC) as analternative to the CPU. The use of the DMAC makes it possible to reducea load on the CPU and improve the operation efficiency of the chip MF.As features for the DMAC, may be mentioned, the support of acycle-stealing transfer, the support of a dual address mode transfer andthe ability to make switching between direct transfer/indirect transfermodes (channel 3 alone). The direct transfer mode corresponds to thefunction of transferring data located at the transfer-source address tothe transfer-destination address. The indirect transfer mode correspondsto the function of using data placed at the transfer-source address asan address and transferring data at that address to thetransfer-destination address. There are also provided a reload function,and transfer request functions based on an external request, a built-incircuit and an auto request in a specific channel. Further, there areprovided various functions such as the selection of a bus mode, thesetting of priorities according to a priority fixing mode and a roundrobin mode, an interruption request to the CPU, etc.

The bus state controller BSC is a circuit which performs separation ordivision of an address space and output control signals according tovarious memories, for example. Thus, DRAM, SRAM, ROM, etc. can bedirectly connected to the chip MF without an externally-providedcircuit. Features of the BSC include various functions such as thesupport of memory access at external expansion (external data bus: 32bits), the division of the address space into five areas (i.e., SRAMspace×4 areas, DRAM space×1 area), the output of bus sizes (8/16/32bits), the number of wait cycles and chip select signals correspondingto the respective areas to the respective areas, the output of a DRAMbar RAS signal and a bar CAS signal upon DRAM space access, the abilityto set characteristics such as an ability to generate a Tp cycle forensuring a RAS precharge time, a DRAM burst access function (high-speedaccess mode support of DRAM), a DRAM refresh function (the support of aprogrammable refresh interval, a bar CAS before bar RASrefresh/self-refresh), the ability to insert a wait cycle based on anexternal wait signal, the ability to access an address data multiplexI/O device, etc.

The user break controller UBC is a circuit for providing the function offacilitating a user's program debug. When a break condition is set tothe UBC, a user break interruption takes place according to the contentsof a CPC-based bus cycle or DMAC and DTC-based bus cycles. The use ofsuch a function makes it possible to easily create a high-function selfmonitor debugger. Thus, even if a large-scaled in-circuit emulator isnot used, the chip MF itself can debug a program with ease. Features ofthe UBC are as follows: The CPU or DMAC produces an interrupt when a buscycle corresponding to a given set condition is produced. It is alsoeasy to construct an on-chip debugger. Further, addresses, a CPU cycleor DMA/DTC cycle, an instruction fetch or data access, reading orwriting, and operand sizes (long word, word, byte) can be set as breakconditions. With the establishment of the break conditions, a user breakinterruption takes place, so that a user break interrupt exceptionroutine created by a user can be executed.

The interrupt controller INTC is a circuit for making a decision as topriorities of interrupt factors and controlling each interrupt requestto the processor CPU. The present INTC has a register for setting thepriorities to the respective interrupts. Thus, the interrupt requestscan be processed in accordance with the priorities set by a user.Features of the INTC are follows: The number of external interruptterminals is 9, the number of internal interrupt factors is 43, and16-level priorities can be set. Further, the occurrence of a noisecanceler function and interrupt indicative of the state of an NMIterminal can be outputted to the outside. When a bus right is beingreleased, the chip MF notifies the occurrence of a built-in peripheralcircuit interrupt to an external bus master, whereby the chip MF is ableto request the bus right.

The serial communication interface SCI comprises, for example, twochannels independent of each other. The two channels have the samefunction. The present SCI is a circuit capable of performing serialcommunications in the form of two systems of an asynchronouscommunication and a clock synchronous communication. Further, thepresent SCI is provided with the function (multi-processor communicationfunction) of performing serial communications between a plurality ofprocessors. Features of the present SCI include various functions suchas the ability to select an asynchronous/clock synchronous mode perchannel, the ability to perform transmission and receptionsimultaneously (full duplex), the incorporation of a dedicated baud-rategenerator therein, the function of performing communications betweenmulti-processors, etc.

The multi-function timer pulse unit MTU is a circuit made up of a6-channel 16-bit timer, for example. Features of the present MTU includethe following various functions: A process for inputting and outputtingsixteen types of waveform outputs or sixteen types of pulses at maximumcan be performed with 16-bit timer 5 channels as a base. Sixteen outputcompare registers and input capture registers, independent comparatorscorresponding to 16 in total, and eight types of counter input clockscan be selected. Further, there are provided an input capture function,pulse output modes (one shot/toggle/PWM/complementary PWM/resetsynchronous PWM), a function for synchronizing a plurality of counters,complementary PWM output modes (the output of a non-overlap waveform forcontrol of a 6-phase inverter, dead time automatic setting, the abilityto set PWM duty to an arbitrary one of 0 to 100%, an output OFFfunction), a reset synchronous PWM mode (the output ofpositive-phase/anti-phase PWM waveforms in the form of three phases), aphase count mode (the ability to perform a 2-phase encoder countingprocess), etc.

The compare match timer CMT comprises two channels, for example and ismade up of a 16-bit free running counter and one compare register or thelike. The compare match timer CMT is provided with the function ofgenerating an interrupt request according to a compare match.

The A/D converter A/D takes a 10-bit×8 channel configuration and iscapable of performing conversion according to an external trigger.Further, the A/D converter A/D has sample and hold functionsincorporated therein in the form of two units and is capable ofsimultaneously sampling two channels.

The watch dog timer WDT is a one-channel timer and is a circuit capableof monitoring the corresponding system. When the value of a counter isoverflown due to a runaway or the like of the system without beingproperly rewritten by the CPU, the watch dog timer WDT outputs anoverflow signal to the outside. Simultaneously, the watch dog timer WDTcan also generate an internal reset signal for the chip MF. When thewatch dog timer is not used as the WDT, it can be used also as aninterval timer. When the watch dog timer is used as the interval timer,it generates an interval timer interrupt each time the counter isoverflown. Further, the watch dog timer WDT is used even upon cancelingor clearing of a standby mode. Incidentally, the internal reset signalcan be generated according to the setting of the corresponding register.A power-on reset or manual reset can be selected as the type of reset.As WDT's features, the WDT is provided with the ability to performswitching between the watch dog timer and the interval timer, thefunction of generating an internal reset, an external signal or aninterruption upon the occurrence of count overflow, etc.

The phase-locked loop circuit PLL is defined as a circuit whichincorporates a clock oscillator therein, for example, and serves as aPLL circuit for clock multiplication.

In the chip MF constructed as described above, these internal circuitsare electrically interconnected with each other by an internal addressbus BUSAI and high-order and low-order internal data buses BUSDI asshown in FIG. 7. Further, a peripheral address bus BUSAO, a peripheraldata bus BSUDO and a control signal line SL connect between theseinternal circuits and external connecting terminals I/O.

The internal address bus BUSAI is given as a 24-bit bus width and ismutually electrically connected between the processor CPU, flash memoryFlash, random access memory/cache memory RAM/Cache, data transfercontroller DTC, direct memory access controller DMAC and bus statecontroller BSC.

The internal data buses BUSDI comprise a high-order 16-bit bus and alow-order 16-bit bus and are respectively mutually connected between theprocessor CPU, flash memory Flash, random access memory/cache memoryRAM/Cache, data transfer controller DTC, direct memory access controllerDMAC and bus state controller BSC. The high-order 16-bit bus and thelow-order 16-bit bus can correspond to a 32-bit data width.

The peripheral address bus BUSAO is set as a 24-bit bus width and iselectrically connected between the respective internal circuits of thebus state controller BSC, interrupt controller INTC, serialcommunication interface SCI, multi-function timer pulse unit MTU,compare match timer CMT and watch dog timer WDT, and the externalconnecting terminals I/O.

The peripheral data bus BUSDO is set as a 16-bit bus width and iselectrically connected between the respective internal circuits of thebus state controller BSC, interrupt controller INTC, serialcommunication interface SCI, multi-function timer pulse unit MTU,compare match timer CMT and watch dog timer WDT, and the externalconnecting terminals I/O.

The control signal line SL is electrically connected between therespective internal circuits of the data transfer controller DTC, directmemory access controller DMAC, bus state controller BSC, user breakcontroller UBC, interrupt controller INTC, serial communicationinterface SCI, multi-function timer pulse unit MTU, compare match timerCMT and A/D converter A/D and between these internal circuits an theexternal connecting terminals I/O.

In the present chip MF, such a function layout as shown in FIG. 8 istaken as the external connecting terminals I/O, which comprise 98input/output terminals and 8 input terminals. Functions of therespective external connecting terminals I/O are represented as shown inthe respective lists illustrative of examples of the category, symbol,input/output and designation and their corresponding terminal functionsas shown in FIGS. 15 through 18. Incidentally, the chip MF having the112 pins is represented in the form of such a function layout as shownin FIG. 10, which includes 74 input/output terminals and 8 input/outputterminals.

FIG. 11 is a functional block diagram showing an example of an internalconfiguration of the chip AD. FIG. 12 is an explanatory view showing anexample illustrative of its terminal functions. Incidentally, the chipAD shows an example illustrative of 144 pins.

The present chip AD takes a circuit configuration in which the DRAM andASIC are formed and which has a memory function capable of performingwrite/read whenever necessary and a processing function using a logiccircuit. As shown in FIG. 11 by way of example, the present chip ADcomprises a power circuit VS, a plurality of DRAM banks Bank, a mainamplifier MA, a data transfer circuit DT, a digital signal processorDSP, a row address buffer RAB, a column address buffer CAB, and acontrol logic/timing generator CR/TG. Incidentally, the DRAM may includean occasionally writable/readable simple dynamic random access memoryDRAM which needs a storage holding operation, a clock-based sync-typesynchronous DRAM (SDRAM), an extended data out DRAM (EDO-DRAM) capableof lengthening a data output time interval, etc.

The power circuit VS is a circuit for receiving a power supply voltageVcc and a ground voltage Vss from the outside and supplying powersupplies or voltages necessary for the plurality of DRAM banks Bank andthe main amplifier MA.

The plurality of DRAM banks Bank are capable of operating independently.Each bank includes, for example, a memory cell, a word decoder, a columndecoder, a sense amplifier and a timing generator. The capacity of eachDRAM bank Bank is given in the form of 256K bits per bank.

The main amplifier MA is a circuit for performing the inputting andoutputting of data between the plurality of DRAM banks Bank and externalconnecting terminals D0 through D31. For example, 128 global data linesand many global data lines are provided between the main amplifier MAand the respective DRAM banks Bank. Data is transferred therebetweenthrough the global data lines.

The data transfer circuit DT switches data transfer patterns between aDRAM comprised of the DRAM banks Bank and the main amplifier MA or thelike and the digital signal processor DSP in real time. The datatransfer circuit DT is capable of selecting one of adjacent data andclearing the data, for example.

The digital signal processor DSP is a circuit for executing theprocessing of digital signals such as images or pictures, voice, etc. Inthe case of image processing, for example, the digital signal processorDSP executes a process for removing or erasing a hidden surface based ona Z-comparison, a process for giving a α-blend based feeling oftransparency, etc. Further, the digital signal processor DSP outputsdata from serial output ports SD0 through SD23 to an output device suchas a display or the like. The digital signal processor DSP and the datatransfer circuit DT are controlled by control signals C0 through C27.

The row address buffer RAB and the column address buffer CAB arecircuits for respectively taking in or capturing address signals fromexternal address signal input terminals A0 through A10 to therebyproduce internal address signals and supplying them to the respectiveDRAM banks Bank. They capture row addresses with a timing of a bar RASand capture column addresses with timings of a bar CASL, a bar CASH, abar CASHL and a bar CASHH, respectively.

The control logic/timing generator CR/TG is a circuit for generatingvarious timing signals necessary for the operation of the DRAM. An inputbar CS is a chip select signal, the bar RAS is a row address strobesignal and the bar CASL, bar CASH, bar CASHL and bar CASHH arerespectively column address strobe signals. Further, a RD/bar WR is aread/write signal (if the signal is high in level, then it showsreading, whereas if the signal is low in level, then it shows writing).The four column address strobe signals are used to allow byte control(read/write control for each byte). The bar CASL is used for the leastsignificant bytes D0 through D7, the bar CASH is used for the secondbytes D8 through D15 as counted from the least significance, the barCASHL is used for the third bytes D16 through D23 as counted from theleast significance, and the bar CASHH is used for the most significantbytes D24 through D31.

In the internal circuits of the chip AD constructed as described above,the plurality of DRAM banks Bank, the row address buffer RAB and thecolumn address buffer CAB are electrically interconnected with eachother by internal address buses BUSAI. Further, the row address bufferRAB, the column address buffer CAB and the external connecting terminalI/O are electrically interconnected with each other by a peripheraladdress bus BUSAO, and the main amplifier MA and the external connectingterminal I/O are electrically connected to each other by a peripheraldata bus BUSDO, respectively.

Further, the data transfer circuit DT and the digital signal processorDSP are electrically interconnected with each other by an address busand an internal bus BUSI for data. Moreover, the data transfer circuitDT, the digital signal processor DSP and their corresponding externalconnecting terminals I/O are electrically connected to one another byperipheral buses BUSO for the data and control signals.

The present chip AD is provided with voltage terminals Vcc and Vss forthe power supply Vcc and ground Vss, address terminals A0 through A10,data input/output terminals D0 through D31, a chip select terminal barCS, a row address strobe terminal bar RAS, column address strobeterminals bar CASL, bar CASH, bar CASHL and bar CASHH, a read/writeterminal RD/bar WR, clock terminals CK, serial data output terminals SD0through SD23, and ASIC control signal terminals C0 through C27 asexternal connecting terminals as shown in FIG. 12.

FIG. 13 is a functional block diagram showing an example of an internalconfiguration of the chip D. FIG. 14 is an explanatory view showing anexample illustrative of its terminal functions. Incidentally, the chip Dshows an example illustrative of 50 pins.

The chip D takes a circuit configuration in which only a DRAM is formedand which has an occasionally writable/readable memory function. Asshown in FIG. 13 by way of example, the chip D comprises a power circuitVS, a plurality of DRAM banks Bank, a main amplifier MA, a row addressbuffer RAB, a column address buffer CAB, and a control logic/timinggenerator CR/TG.

The chip D takes a circuit configuration having only the DRAM excludingthe logic circuit comprised of the data transfer circuit DT and thedigital signal processor DSP of the chip AD shown in FIG. 11. Thus,since the internal circuits constituting the chip D are identical tothose of the chip AD, their functional description will be omittedherein.

The chip D is provided with voltage terminals Vcc and Vss for the powersupply Vcc and ground Vss, address terminals A0 through A11, datainput/output terminals DQ0 through DQ31, a row address strobe terminalbar RAS, a column address strobe terminal bar LCAS, a bar UCAS, a writeenable terminal bar WE, and an output enable terminal bar OE as externalconnecting terminals as shown in FIG. 14.

In the semiconductor device according to the present embodiment, whichis comprised of combinations of the chip MF and chip MFA, and one or theplurality of chips AD, and the chip D as described above, signalterminals mutually common to the connecting terminals of the chip MF orMFA and the connecting terminals of the chip AD or D are commonlyassigned to the same external connecting terminals. The connectingterminals commonly assigned to the same external connecting terminalswill be explained below in detail.

FIG. 19 is a connection diagram showing an example of connectionsbetween the chips MF shown in FIGS. 7 and 8 each having the 144 pins andthe two chips D shown in FIGS. 13 and 14 each having the 50 pins.Incidentally, FIG. 19 shows only connections between signal terminalscommon to the connecting terminals of the chip MF and the connectingterminals of the chip D, and their corresponding external connectingterminals. In practice, the connecting terminals corresponding to signalterminals independent of each other in the chip MF alone are alsoelectrically connected to the external connecting terminals.

Upon the connections between the chip MF having the 144 pins and the twochips D each having the 50 pins, address terminals A0 through A11 of thechip MF are electrically connected to their corresponding addressterminals A0 through A11 of the two chips D and electrically connectedto the same external connecting terminals A0 through A11. Datainput/output terminals D0 through D31 of the chip MF are electricallyconnected to their corresponding data input/output terminals DQ0 throughDQ15 of the chips D in divided form and electrically connected to thesame external connecting terminals D0 through D31.

The power supply terminal Vcc and ground terminal Vss of the chip MF areelectrically connected to their corresponding power supply terminals Vccand ground terminals Vss of the chips D. Further, they are electricallyconnected to the same external connecting terminals Vcc and Vssrespectively. Incidentally, since the voltage terminals are actuallyassigned to the plurality of terminals of the chip MF, chip D andexternal connecting terminals, they are connected with the sameterminals.

Further, as those concerned with the control signals, the row addressstrobe terminal bar RAS of the chip MF is commonly connected to the twochips D and connected to the external connecting terminal bar RAS. Thecolumn address strobe terminals bar CASL and bar CASH of the chip MF areelectrically connected to their corresponding column address strobeterminals bar LCAS and bar UCAS of one chip D and electrically connectedto their corresponding external connecting terminals bar CASL and barCASH. The column address strobe terminals bar CASHL and bar CASHH of thechip MF are electrically connected to their corresponding column addressstrobe terminals bar LCAS and bar UCAS of the other chip D andelectrically connected to their corresponding external connectingterminals bar CASHL and bar CASHH.

A read/write terminal RD/bar WR of the chip MF is commonly connected toits corresponding write enable terminal bars WE of the two chips D andits corresponding external connecting terminal RD/bar WR. A chip selectterminal bar CS3 of the chip MF is commonly connected to itscorresponding output enable terminals bars OE of the two chips D and itscorresponding external connecting terminal bar CS3.

Upon the connections between the chip MF, chip D and external connectingterminals as described above, all the connecting terminals of the chip Dare used in common with the connecting terminals of the chip MF. Theyare electrically connected to the same external connecting terminals.Incidentally, since the connecting terminals serving as the signalterminals made independent in the chip MF alone also exist in practicein the semiconductor device based on the chip MF and the chip D, theexternal connecting terminals connected to the independent connectingterminals are also connectable to the outside.

FIG. 20 is a connection diagram showing an example of connectionsbetween the chips MF shown in FIGS. 7 and 8 each having the 144 pins andthe chips AD shown in FIGS. 11 and 12 each having the 144 pins.Incidentally, FIG. 20 also shows only connections between signalterminals common to the connecting terminals of the chip MF and theconnecting terminals of the chip AD, and their corresponding externalconnecting terminals in a manner similar to FIG. 19. In practice, theconnecting terminals corresponding to signal terminals made independentin the chips MF and AD alone are also electrically connected to theexternal connecting terminals.

Upon the connections between the chip MF having the 144 pins and thechip AD having the 144 pins, address terminals A0 through A10 of thechip MF are electrically connected to their corresponding addressterminals A0 through A10 of the chip AD and electrically connected tothe same external connecting terminals A0 through A10. Data input/outputterminals D0 through D31 of the chip MF are electrically connected totheir corresponding data input/output terminals D0 through D31 of thechip AD and electrically connected to the same external connectingterminals D0 through D31.

The power supply terminal Vcc and ground terminal Vss of the chip MF areelectrically connected to their corresponding power supply terminal Vccand ground terminal Vss of the chip AD. Further, they are electricallyconnected to the same external connecting terminals Vcc and Vssrespectively. Incidentally, since the voltage terminals are actuallyassigned to the plurality of terminals of the chip MF, chip D andexternal connecting terminals, they are connected to one another by thesame terminals.

Further, as those concerned with the control signals, a row addressstrobe terminal bar RAS, column address strobe terminals bar CASL, barCASH, bar CASHL and bar CASHH, a read/write terminal RD/bar WR, a chipselect terminal bar CS3 and a clock terminal CK of the chip MF arerespectively electrically connected to a row address strobe terminal barRAS, column address strobe terminals bar CASL, bar CASH, bar CASHL andbar CASHH, a read/write terminal RD/bar WR, a chip select terminal barCS3 and a clock terminal CK of the chip AD. Further, they arerespectively electrically connected to a row address strobe terminal barRAS, column address strobe terminals bar CASL, bar CASH, bar CASHL andbar CASHH, a read/write terminal RD/bar WR, a chip select terminal barCS3 and a clock terminal CK of the same external connecting terminals.

In the semiconductor device based on the chip MF and the chip AD asdescribed above, the serial data outputs SD0 through SD23 correspondingto the signals peculiar to the chip AD alone, and the ASICA controlsignal terminals C0 through C27 are actually made independentrespectively. Further, the connecting terminals corresponding to thesignal terminals made independent in the chip MF alone also exist.Therefore, the external connecting terminals connected to theseindependent connecting terminals are provided so as to be connectable tothe outside.

When the DRAMs of the chips AD and D are defined as synchronous DRAMs inthe semiconductor device, it is necessary to further providesynchronization inside the semiconductor device. Therefore, the clockterminal to which a clock signal corresponding to a control signal forsynchronization has been assigned, is electrically connected to the sameexternal connecting terminal as the common connecting terminal.

Summaries of the operation of the present embodiment, i.e., theoperation of data reading of the chip AD (chip D) to the DRAM from theprocessor CPU of the chip MF (chip MFA), its data writing operation andits refresh operation will next be explained in the semiconductor deviceconstructed by the combinations of the chip MF and chip MFA and one orplural chips AD and chips D.

(1) Read Operation

Since an address signal is inputted on a time-sharing basis upon addressmultiplex, it is necessary to provide two synchronizing signals of therow address strobe signal bar RAS and column address strobe signal barCAS from the processor CPU. A period or cycle in which the bar RAS isplaced in an high level (H), corresponds to a period in which a RASsystem circuit is precharged. During this period, any memory operationsare not performed inside the chip. On the other hand, a period in whichthe bar CAS is H, corresponds to a period in which a CAS system circuitsuch as a data output buffer, a data input buffer or the like isprecharged. The operation of data reading of the chip AD from theoutside and the operation of data writing thereof are not performedduring this period.

When the bar RAS is brought to a low level (L), the RAS system circuitis activated so that the memory operation is started. When the bar CASbecomes L subsequently, the read operation or write operation starts andhence the transfer of data between the chip AD and the external chip MFis performed. Thus, the precharge period and the activation period arealternately repeated in the DRAM of the chip AD. A cycle time of the barRAS corresponds to that of the chip AD.

The designation of the read operation is performed by setting the writeenable signal bar WE to H antecedent to the rise of the bar CAS andholding it until the bar CAS rises. Once data is outputted, the data isheld until the bar CAS rises. The type of access time is three and thetime intervals required to output the data to the data output terminalsfrom the falling edges of the bar RAS and bar CAS will be called “barRAS access time and bar CAS access time” respectively. Further, the timethat elapses between the determined time of a column address and theoutput of data, will be called “address access time”.

(2) Write Operation

Since the relationship between each address signal, the bar RAS and thebar CAS is identical to that at the read operation, the descriptionthereof will be omitted. Further, the timing standards of the bars RASand CAS such as the cycle time or the like are identical to those at theread operation. However, the write operation is specified by setting thebar WE to L antecedent to the leading edge of the bar CAS. During thiscycle, the data output terminal is held in a high impedance state.Incidentally, there are also specifications based on a Read Modify Writeoperation that data temporarily read into the chip MF lying outside thechip AD is changed by the chip MF while the bar RAS is kept in a stateof remaining L, and the so-changed data is written into the same memorycell again.

(3) Refresh Operation

There are known a refresh operation performed by initiating an interruptduring a random access operation like reading or writing, and a refreshoperation performed only to hold information stored inside the chip ADas in the case of a battery backup period. In the former, a bar RAS onlyrefresh and a CBR (bar CAS before bar RAS) refresh are standard. In thelatter, a self-refresh is standard.

In the bar RAS only refresh, for example, all the memory cellscorresponding to one row (word line) are simultaneously refreshed duringone cycle of the bar RAS based on the same timing standards as those forthe read and write operations. However, a refresh address must besupplied from the chip MF lying outside the chip AD after the setting ofthe bar CAS to H.

There are known a centralized refresh and a decentralized refresh as themanner in which this refresh is done. This centralized refresh is amethod wherein the refresh is repeated in a minimum cycle and a memoryaccess cannot be performed from the chip MF lying outside the chip ADduring this period, whereas during the remaining period, the memoryaccess is accepted from the outside without causing the refresh to beinterrupted. With respect to the decentralized refresh, one cycle of therefresh operation is equally decentralized during the maximum refreshperiod. Since the decentralized refresh is actually used heavily, onecycle of the refresh operation results in timing provided to interrupt acycle for the normal read/write operation.

The CBR refresh is performed as follows: The presence or absence of arefresh operation is determined inside by setting the bar CAS to L priorto the bar PAS. An address is generated from an internal refresh addresscounter according to a pulse indicative of such a result ofdetermination to thereby select a word line, whereby its correspondingmemory cell is refreshed. It is thus unnecessary to give an address fromthe outside of the chip AD.

The self-refresh is performed as follows: After the completion of anormal memory cycle, a pulse width of the bar RAS is set to greater than100 μs, for example with CBR timing set therefor. When the pulse widthreaches greater than this time inside the chip, a refresh operationusing a refresh address counter and a refresh timer is started. Further,the self-refresh continues so long as the bars RAS and CAS are both L.While the chip AD is reduced in power consumption as refreshed frequencydecreases, this frequency is automatically controlled by a timer fordetecting an internal temperature of the chip AD. Incidentally, a barRAS precharge period is required upon shifting from the self-refresh tothe normal cycle.

The operation of data reading from the processor CPU of the chip MF tothe DRAM of the chip AD, its write operation and its refresh operationare performed in the above-described manner. As one characteristic ofthe present invention, the logic circuit lying inside the chip AD takessuch a circuit configuration as to be able to execute the refreshoperation/access operation upon the self-refresh operation for thisrefresh in particular. A detailed description will be made of the casein which the refresh operation/access operation can be executed upon theself-refresh operation.

FIG. 21 is a rough block diagram schematically showing an exampleillustrative of internal functions of the chip AD shown in FIG. 11. Thechip AD comprises a dynamic random access memory DRAM, a logic Logicwith a built-in memory, and a DRAM access control circuit DAC.Incidentally, the DRAM, logic Logic with the built-in memory and DRAMaccess control circuit DAC respectively correspond to a DRAM portioncomprised of the plurality of DRAM banks Bank and the main amplifier MAor the like shown in FIG. 11, an ASIC portion comprised of the datatransfer circuit DT and the digital signal processor DSP, and an accesscontrol portion comprised of the row address buffer RAB and the columnaddress buffer CAB or the like. Further, an input buffer IB and anoutput buffer OB correspond to a circuit I/O for performing theinput/output of data between the main amplifier MA and the externalconnecting terminals D0 through D32 shown in FIG. 11 and a circuit I/Oelectrically connected to the digital signal processor DSP,respectively.

In the chip AD, a chip select signal bar CS, a row address strobe signalbar RAS and a column address strobe signal bar CAS are inputted tocontrol signal terminals. Address signals are inputted to the DRAMaccess control circuit DAC through address terminals, and data signalsare capable of being input and output through their corresponding datainput/output terminals. Further, the DRAM and the DRAM access controlcircuit DAC are electrically interconnected with each other by anaddress bus BUSA inside the chip AD. The DRAM, the logic Logic with thebuilt-in memory and the data input/output terminals are electricallyinterconnected with each other by a data bus BUSD. For example, eachdata input/output terminal corresponds with 8 bits, for example, whereasthe data bus BUSD placed inside the chip AD takes a bus with of 64 bitsgreater than it.

The memory-contained logic Logic and the DRAM access control circuit DACare electrically connected to each other by an address bus and a controlsignal line inside the chip AD. A permission or enabling signal for theself-refresh operation is outputted from the DRAM access control circuitDAC to the memory-contained logic Logic. A read/write signal R/W andaddress signals are outputted from the memory-contained logic Logic tothe DRAM access control circuit DAC. Incidentally, the read/write signalR/W may be outputted in parts as a read signal R and a write signal W.During the self-refresh period, data input/output inhibit signals DISare respectively outputted from the DRAM access control circuit DAC tothe input buffer IB and the output buffer OB. In response to the datainput/output inhibit signal DIS, the input buffer IB inhibits the inputof data from the outside of the chip AD during the self-refresh period.Further, the output buffer OB inhibits the output of data on the databus BUSD to the outside of the chip AD in response to the datainput/output inhibit signal DIS.

FIG. 22 is a block diagram showing a detailed example of the DRAM accesscontrol circuit DAC. The DRAM access control circuit DAC comprises aninternal control signal generator CSG, a plurality of selector circuitsSC, etc. Based on a chip select signal bar CS, a row address strobesignal bar RAS, and a column address strobe signal bar CAS inputted tothe internal control signal generator CSG, the DRAM access controlcircuit DAC generates address selecting control signals, and produces anenabling signal for the self-refresh operation and outputs it to thememory-contained logic Logic.

The memory-contained logic Logic supplied with the enabling signal canbe accessed to the DRAM. Thus, the memory-contained logic Logic outputsa read/write R/W to the DRAM access control circuit DAC to make aread/write request thereto and outputs an address signal to the DRAMaccess control circuit DAC to select an arbitrary memory cell. Thus, thereading/writing of data between the selected memory cell and thememory-contained logic Logic can be performed. Incidentally, theread/write request may be made by outputting a read signal R to the DRAMaccess control circuit DAC when it is desired to make a read request andoutputting a write signal W thereto when it is desired to make a writerequest.

The address control signals generated from the internal control signalgenerator CSG are used as address control signals for selecting one ofan access operation from the processor CPU of the chip MF lying outsidethe chip AD and an access operation from the memory-contained logicLogic lying inside the chip AD through the selector circuit SC tothereby select an arbitrary memory cell of the DRAM.

FIG. 23 is an explanatory view showing examples of transient states ofoperation modes employed in the internal control signal generator CSG.The operation modes are classified into an access operation mode withrespect to the normal DRAM, a self-refresh operation mode for the DRAMand an access operation mode with respect to the internalmemory-contained logic Logic. The normal DRAM access operation mode isshifted to the self-refresh operation mode without making the read/writerequest based on the read/write signal R/W issued from thememory-contained logic Logic. A return to the normal DRAM accessoperation mode is performed by clearing or setting free the refresh.

Further, the self-refresh operation mode is shifted to the internalaccess operation mode when the read/write request is issued from thememory-contained logic Logic. A return to the self-refresh operationmode is performed according to the completion of the reading/writing.Similarly, the normal DRAM access operation mode is shifted to theinternal access operation mode when the read/write request issued fromthe memory-contained logic Logic is made. A return to the normal DRAMaccess operation mode is done by clearing the refresh.

FIG. 24 is an operation timing chart for describing an exampleillustrative of control of the DRAM access control circuit DAC includingthe internal control signal generator CSG over the DRAM. As shown inFIG. 24(a), the operation control on the DRAM includes a normal DRAMaccess period in which a normal DRAM access can be executed and a DRAMself-refresh period which is placed between the normal DRAM accessperiod and another normal DRAM access period and in which theself-refresh for the DRAM can be executed. The present DRAM self-refreshperiod corresponds to a period in which the normal access operation tothe DRAM from the chip MF is not carried out.

During the DRAM self-refresh period, a self-refresh operation enablingsignal is outputted to the memory-contained logic Logic in synchronismwith a clock signal CK on the basis of a row address strobe signal barRAS and a column address strobe signal bar CAS. Only when a request asto the access operation for reading/writing based on the control signalR/W to the DRAM is made from the memory-contained logic Logic, therefresh operation is set free to thereby allow an access operation tothe DRAM from the memory-contained logic Logic (digital signal processorDSP).

The refresh operation/access operation in the self-refresh period areactually performed as shown in FIG. 24(b) by way of example. That is,the read operation can be repeated according to the read request basedon the control signal R. Further, the refresh operation can be executedbetween the present reading and another reading and the read operationcan be repeated according to the write request based on the controlsignal W. The refresh operation can be executed between this writing andanother writing. In addition, the read and write operations can berepeated according to the read request based on the control signal R andthe write request based on the control signal W, and the refreshoperation can be executed during a period between the read and writeaccess operations.

Upon execution of the self-refresh operation to the DRAM of the chip ADby the processor CPU of the chip MF, the memory-contained logic Logic ofthe chip AD can effect an access operation on the DRAM, the data can bewritten into the DRAM according to the write request issued from thememory-contained logic Logic, and the data can be read from the DRAMaccording to the read request therefrom in the above-described manner.

Incidentally, the access operation to the DRAM by the memory-containedlogic Logic of the chip AD upon this self-refresh operation is performedsimilarly even where other chips are connected to the chip AD. Similareffects can be expected even in the case of the above-described chip MFAand another semiconductor chip simply including a CPU, for example. Thatis, each chip can be applied to a semiconductor device having a packagestructure which allows an external access operation to a DRAM by a chipAD and a self-refresh operation of the DRAM.

A specific structure of the package according to the present embodimentwill next be described in detail. FIG. 25 is an overall perspective viewof the package according to the present embodiment, and FIG. 26 is across-sectional view of the package, respectively.

The package according to the present embodiment has a multilayered orstacked TCP structure wherein the first chip MF (corresponding to themicrocomputer equipped with the flash memory) with the microcomputer andthe flash memory formed therein is sealed with a first TCP (Tape CarrierPackage) 1A, the second chip AD (corresponding to the DRAM on-chiplogic) with the DRAM and ASIC formed therein is sealed with a secondTCP1B, and these two TCP1A and TCP1B are superimposed on one another inupward and downward directions so that they are integrally joinedtogether.

The first chip MF sealed with the first TCP1A is placed within a devicehole 3 a defined in a central portion of a tap carrier 2 a with itsprincipal surface (device forming surface) directed downward. Further,the first chip MF is electrically connected to one ends (inner leadportions) of leads 5 a formed over the whole surface of the tape carrier2 a through bump electrodes 4 formed at peripheral portions of theprincipal surface thereof. A potting resin 6 for protecting an LSI(microcomputer equipped with flash memory) formed over the major surfacefrom external environments is placed on the principal surface of thechip MF.

The leads 5 a formed over the whole surface of the tape carrier 2 a havepatterns shown in FIG. 27 respectively. The surfaces of these leads 5 aare covered with solder resists 7 except for one ends (inner leadportions) which project into the device hole 3 a. The other ends of therespective leads 5 a are electrically connected to through holes 8 aeach extending through one surface to the other surface of the tapecarrier 2 a. These through holes 8 a are placed in two rows along thefour sides of the tape carrier 2 a. Solder bumps 9 used as externalconnecting terminals at the time that this multilayered TCP isimplemented on a printed wiring board, are bonded onto the surfaces ofthe respective through holes 8 a as shown in FIG. 26.

The second TCP1B is multilayered at an upper portion of the first TCP1A.The TCP1A and TCP1B are bonded tight to each other by an adhesive 10applied to alignment surfaces of the two. The second chip AD sealed withthe TCP1B is placed within a device hole 3 b defined in a centralportion of a tap carrier 2 b with its principal surface directeddownward. Further, the second chip AD is electrically connected to oneends (inner lead portions) of leads 5 b formed over the whole surface ofthe tape carrier 2 b. A potting resin 6 for protecting an LSI (DRAMon-chip logic) formed over the major surface of the chip AD fromexternal environments is placed on the principal surface of the chip AD.

The outside dimension of the tape carrier 2 b of the TCP1B is identicalto that of the tape carrier 2 a of the TCP1A. Since the outsidedimension of the chip AD is smaller than that of the chip MF, the sizeof the device hole 3 b of the tape carrier 2 b becomes correspondinglysmaller than that of the device hole 3 a of the tape carrier 2 a.

The leads 5 b formed over the whole surface of the tape carrier 2 b havepatterns shown in FIG. 28 respectively. The other ends of the respectiveleads 5 b are electrically connected to through holes 8 b each extendingthrough one surface to the other surface of the tape carrier 2 b. Thesethrough holes 8 b are identical to the through holes 8 a of the tapecarrier 2 a and placed in two rows along the four sides of the tapecarrier 2 b. The through holes 8 a of the tape carrier 2 a and thethrough holes 8 b of the tape carrier 2 b are formed in the same numberand with the same pitch. Further, the through holes 8 a and 8 b, whichface each other when the tape carriers 2 a and 2 b are superimposed onone another, are placed so as to be accurately superimposed on eachother. Solder 11 has been charged into the through holes 8 a and 8 b.The opposite through holes 8 a and 8 b are electrically connected to oneanother with the solder 11 interposed therebetween.

The multilayered TCP according to the present embodiment has a structurein which connecting terminals (pins) shared (i.e., having the samefunction) between the two chips MF and AD are electrically connected toeach other via the through holes 8 a and 8 b of the tape carriers 2 aand 2 b, which are placed in the same positions, and they are commonlywithdrawn to the outside (printed wiring board) through the solder pumps9 bonded to one ends of the through holes 8 a.

FIG. 27 is given numbers (1 through 144) of the connecting terminalsformed in the chip MF and numbers (1 through 200) of the through holes 8a defined in the tape carrier 2 a. Further, numbers (1 through 144) ofthe connecting terminals formed in the chip AD and numbers (1 through200) of the through holes 5 b defined in the tape carrier 2 b areassigned to FIG. 28. The through holes 8 a and 8 b of the tape carriers2 a and 2 b, which are placed in the same positions, are identified bythe same numbers respectively.

One example illustrative of the layout of the connecting terminals andthe through holes 8 a and 8 b of the chips ME and AD is shown inTable 1. In Table 1, numbers (1 through 144) indicated in the columns ofMFpin# correspond to the numbers (1 through 144) of the connectingterminals of the chip MF shown in FIG. 27, whereas numbers (1 through144) indicated in the columns of ADpin# correspond to the numbers (1through 144) of the connecting terminals of the chip AD shown in FIG.28. Further, numbers indicated in the columns of Via# correspond to thenumbers assigned to the connecting terminals common to either one of thechips MF and AD or both, of the numbers (1 through 200) of the throughholes 8 a and 8 b shown in FIGS. 27 and 28.

TABLE 1 Via# MFpin# ADpin# 3 1 4 1 5 2 6 2 7 3 8 3 10 4 4 9 5 12 5 11 66 14 7 7 13 8 8 16 9 9 15 10 10 18 11 11 17 12 12 20 13 13 19 14 14 2215 15 21 16 16 24 17 17 23 18 18 26 19 19 25 20 28 20 27 21 30 21 29 2232 22 31 23 34 23 33 24 36 24 35 25 38 25 37 26 26 39 27 40 27 41 28 2842 29 29 43 30 44 30 45 31 31 46 32 32 47 33 48 33 49 34 34 50 35 35 5136 36 54 37 52 37 55 38 56 38 57 39 58 39 60 40 40 59 41 62 41 61 42 4263 43 64 43 65 44 66 44 68 45 45 67 46 46 70 47 69 48 72 49 71 50 74 5173 52 75 53 76 54 54 77 55 55 78 56 56 79 57 57 80 58 58 81 59 59 82 6060 83 61 61 84 62 62 85 63 63 86 64 64 87 65 65 88 66 66 89 67 67 90 6868 91 69 69 92 70 70 93 71 71 94 72 72 95 73 73 96 74 74 97 75 75 98 7676 99 77 77 100 78 78 101 79 79 102 80 80 104 81 81 106 82 82 105 83 83108 84 84 107 85 85 110 86 86 109 87 87 112 88 88 111 89 89 114 90 90113 91 91 116 92 92 115 93 93 117 94 118 94 119 95 120 95 121 96 122 96123 97 124 97 125 98 126 98 128 99 99 127 100 130 100 129 101 132 101131 102 134 102 133 103 136 103 135 104 104 138 105 105 137 106 106 139107 107 140 108 108 141 109 142 109 143 110 144 110 145 111 146 111 147112 112 149 113 148 113 151 114 150 114 154 115 152 115 155 116 156 116158 117 117 157 118 160 118 159 119 162 119 161 120 164 120 163 121 166121 165 122 168 122 167 123 170 123 169 124 172 124 171 125 174 125 173126 176 126 175 127 177 128 178 129 129 179 130 180 131 181 132 182 133183 134 184 135 135 185 136 186 136 187 137 188 137 189 138 190 138 191139 192 139 193 140 194 140 195 141 141 197 142 196 142 199 143 198 1432 144 200 144

As shown in FIGS. 27 and 28, the connecting terminals common to thechips MF and AD are placed substantially in the same positions of thechips MF and AD. Thus, since the routing of the leads 5 a and 5 b of thetape carriers 2 a and 2 b becomes easy and the length of each lead canbe shortened, the transfer of data between the chips MF and AD can bespeeded up. Since the required numbers of through holes 8 a and 8 b canbe minimized, the tape carriers 2 a and 2 b can be reduced in outsidedimensions and the package can be brought into less size.

Although not limited in particular, the respective members constitutingthe multilayered TCP according to the present embodiment are constructedof the following materials and by the following dimensions.

Each of the tape carriers 2 a and 2 b is made up of a polyimide filmhaving a thickness of 75 μm. Each of the leads 5 a and 5 b is comprisedof Cu (copper) foil having a thickness of 18 μm. The surfaces of oneends (inner lead portions) of the leads 5 a and 5 b are given Au (gold)or Sn (tin) plating respectively. The adhesive 10 is composed ofpolyimide and the thickness thereof is 12 μm. The solder resist 7 iscomposed of an epoxy resin and the thickness thereof is 20 μm. Thesolder bumps 9 corresponding to the external connecting terminals andthe solder 11 lying within each of the through holes 8 a and 8 b iscomposed of an alloy of lead (Pb) and tin (Sn). Each of the chips MF andAD is composed of monocrystalline silicon having a thickness of 50 μmand the potting resin 6 for protecting their principal surfaces iscomposed of the epoxy resin. Each individual bump electrodes 4 formedover the principal surfaces of the chips MF and AD are respectivelycomposed of Au and their heights are 20 μm. That is, since the totalthickness of the chip MF and each bump electrode 4 is thinner than thethickness of the tape carrier 2 a and the total thickness of the chip ADand each bump electrode 4 is thinner than the thickness of the tapecarrier 2 b, the multilayered TCP is brought to an ultra-thin package inwhich the thickness in a multilayered direction, of the portionexcluding the solder bumps 9 is 218 μm.

A method of manufacturing the multilayered TCP according to the presentembodiment will next be explained with reference to FIGS. 29 through 37.Incidentally, FIGS. 29(a) through 33(a) are respectively cross-sectionalviews of TCP1B and FIGS. 29(b) through 37(b) are respectivelycross-sectional views of TCP1A.

Tape carriers 2 a and 2 b each composed of the polyimide film are firstprepared as shown in FIG. 29. They are punched to define a device hole 3a and a through hole 8 a in the tape carrier 2 a and define a devicehole 3 b and a through hole 8 b in the tape carrier 2 b. While thesetape carriers 2 a and 2 b are respectively provided as longer filmswound around reels, only their parts (corresponding to respective onesof TCP1A and TCP1B) are shown in the drawing.

Next, Cu foil is laminated over the respective one surfaces of the tapecarriers 2 a and 2 b as shown in FIG. 30. Thereafter, the Cu foil issubjected to wet etching to form each lead 5 a on the tape carrier 2 aand form each lead 5 b on the tape carrier 2 b. Simultaneously, Cu foilholes 12 a are defined in one ends of the through holes 8 a and Cu foilholes 12 b are defined in one ends of the through holes 8 b. To ensurethe areas where the solder (11) charged inside the through holes 8 a and8 b and the leads 5 a and 5 b come into contact with each other andprevent breaks in through hole in the subsequent process steps, thediameter of each Cu foil hole 12 a is set smaller than that of eachthrough hole 8 a and the diameter of each Cu foil hole 12 b is setsmaller than that of each through hole 8 b. Since the Cu foil is low inthermal expansion coefficient and high in dimension stability ascompared with the tape carriers 2 a and 2 b composed of the polyimide,the positioning of the tape carriers at the time that the tape carrier 2a and the tape carrier 2 b are superimposed or overlaid on one anotherusing the through holes 8 a and 8 b in the subsequent process steps, canbe performed with high accuracy if the diameters of the Cu foil holes 12a and 12 b are set smaller than those of the through holes 8 a and 8 b.

Next, the surface of one end (inner lead portion) of each lead 5 a,which projects into the device hole 3 a of the tape carrier 2 a, and thesurface of one end (inner lead portion) of each lead 5 b, whichprotrudes into the device hole 3 b of the tape carrier 2 b, are given Auor Sn plating by an electrolytic plating method as shown in FIG. 31.Thereafter, a solder resist 7 is applied to the lower surface of thetape carrier 2 a and an adhesive 10 is applied to the lower surface ofthe tape carrier 2 b.

The bump electrodes 4 and the leads 5 a of the tape carrier 2 a formedat the connecting terminals of the chip MF are collectively connected toone another by a gang bonding method as shown in FIG. 32. Further, thebump electrodes 4 and the leads 5 b of the tape carrier 2 b formed atthe connecting terminals of the chip AD are collectively connected toone another by the gang bonding method. After the backs of the chips MFand AD have been polished in advance in a wafer state, their thicknessesare set thin up to 50 μm by spin etching. The bump electrodes 4 areformed in a final process step of a wafer process by using a stud bumpboding method. Since the inner lead portions of the leads 5 a and 5 bare given Au or Sn plating, the leads 5 a and the bump electrodes 4, andthe leads 5 b and the bump electrodes 4 are respectively joined to oneanother by an Au—Au junction or an Au—Sn eutectic junction. Thejunctions between the leads 5 a and 5 b and the bump electrodes 4 may bedone by a single point bonding method as an alternative to the gangbonding method respectively.

A potting resin 6 is inserted into a clearance defined by the principalsurface of the chip MF and the tape carrier 2 a and each device hole 3 athereof by using a resin potting dispenser as shown in FIG. 33.Similarly, the potting resin 6 is put into a clearance defined by theprincipal surface of the chip AD and the tape carrier 2 b and eachdevice hole 3 b thereof.

Next, the longer tape carriers 2 a and 2 b are divided into pieces orfractions by using a cutting die. Thereafter, each individual tapecarriers 2 a and 2 b are mounted into their corresponding sockets andsubjected to an aging test, thereby selecting good products or items.The aging of the tape carriers 2 a and 2 b is performed while pins forthe sockets are being applied or tapped onto testing pads formed atrespective portions of the tape carriers 2 a and 2 b. The TCP1A in whichthe chip MF is sealed and the TCP1B in which the chip AD is sealed, aresubstantially completed in the process steps used up to now.

Next, the tape carriers 2 a and 2 b are superimposed on one another sothat the opposed through holes 8 a and 8 b accurately coincide inposition with one another as shown in FIG. 34. Further, the tapecarriers 2 a and 2 b are heated and crimped and thereafter bonded toeach other with the adhesive 10, whereby the TCP1A and TCP1B are broughtinto one package. Since the chip MF is thinner than the tape carrier 2 aand the chip AD is thinner than the tape carrier 2 b as described above,the TCP1A and TCP1B can be bonded tight to each other. Theabove-described Cu foil holes 12 a and 12 b are used for the positioningof the through holes 8 a and 8 b. Alternatively, the testing padsprovided at the respective parts of the tape carriers 2 a and 2 b may beused therefor.

Next, solder paste composed of a lead (Pb)—tin (Sn) alloy is embeddedinto the through holes 8 a and 8 b by a screen printing method as shownin FIG. 35. Thereafter, the solder paste is caused to re-flow to therebyform solder 11.

Afterwards, solder bumps 9 are formed at one ends of the through holes 8a of the tape carrier 2 a, whereby the multilayered or stacked TCP shownin FIGS. 1 and 2 can be completed. The solder bumps 9 are formed bypositioning pre-formed solder balls on their corresponding through holes8 a in a state in which solder bump forming surfaces of the tape carrier2 a are being turned upward and thereafter re-flowing the solder balls.Alternatively, the solder balls 9 may be formed by transferring solderbumps placed on the surface of a glass substrate to the surfaces of thethrough holes 8 a. Each solder bump 9 is composed of a lead (Pb)—tin(Sn) alloy lower in melting point than the solder 11 charged into thethrough holes 8 a and 8 b.

In order to implement the multilayered TCP manufactured in this way inthe printed wiring board, the solder bumps 9 are positioned on theircorresponding electrodes 15 of the printed wiring board 14 andthereafter the solder bumps 9 may be caused to reflow.

Since heat produced from the chips MF and AD escapes to the substratethrough the solder bumps 9 principally in the multilayered TCP accordingto the present embodiment, the corresponding chip higher in the amountof produced heat is placed on the lower side (on the side near thesubstrate) when the TCP1A and the TCP1B are stacked together. Since thechip MF formed with the microcomputer equipped with the flash memory isgreater than the chip AD formed with the DRAM on-chip logic in thenumber of functional blocks and larger than the chip AD in the amount ofproduced heat in the above-described example, the chip MF is placed onthe lower side of the chip AD. Further, the placement of thecorresponding chip large in the number of connecting terminals on thelower side (substrate side) makes it easy to route wires orinterconnections for connecting the connecting terminals of thecorresponding chip and their corresponding external connectingterminals.

In the system on-chip designed multilayered module large in the amountof produced head in this way, each memory cell of the DRAM formed in thechip AD may preferably adopt a stacked capacitor (STC) structure. Thisis because the stacked capacitor structure is reduced in thermal leakagecurrent and high in thermal reliability as compared with a planarcapacitor structure. Further, the stacked capacitor structure can alsoreduce the amount of produced heat because a reference cycle thereforcan be lengthened.

When the amount of heat produced by the chip is so large, a radiationfin 16 composed of a metal such as Al having a high thermal conductivitymay be attached to the upper portion of the multilayered TCP as shown inFIG. 37. In this case, a chip MF whose produced amount of heat is large,is placed on an upper portion (on the side near the radiation fin 16) ofa chip AD.

Another embodiment of the package according to the present inventionwill next be described.

While the respective solder 11 have been embedded into the oppositethrough holes 8 a and 8 b after the TCP1A and TCP1B have beensuperimposed on one another in the above-described manufacturing method(see FIGS. 34 and 35), the TCP1A and TCP1B may be brought or combinedinto one package according to the following method.

First of all, a TCP1A and a TCP1B are individually formed as shown inFIG. 38 in accordance with the aforementioned method. Next, as shown inFIG. 39, solder paste 11 p is embedded into each through hole 8 a of theTCP1A and the solder paste 11 p is embedded into each through hole 8 bof the TCP1B, respectively. A screen printing method is used for theembedding of the solder paste 11 p thereinside.

Next, as shown in FIG. 40, tape carriers 2 a and 2 b are superimposed onone another and heated and pressed under pressure. Thereafter, the twoare bonded to each other with an adhesive 10. Further, the solder paste11 p is caused to re-flow to thereby form solder 11 inside the throughholes 8 a and 8 b. The subsequent process steps are identical to thoseemployed in the above-described manufacturing method.

According to the present manufacturing method, since the TCP1A and TCP1Bare tacked with an adhesive strength, the opposed through holes 8 a and8 b can be prevented from being displaced in position during a period inwhich the superimposed TCP1A and TCP1B are transferred to a heatingfurnace or the like where they are heated and pressed under pressure.

As another method of forming the through holes 8 a and 8 b, the tapecarriers 2 a and 2 b are superimposed on one another to bring the TCP1Aand TCP1B into one package. Thereafter, holes are defined in the tapecarriers 2 a and 2 b by a drill. Next, conductive layers may be formedinside the holes by an electroless plating method.

Further, the sealing of the chips MF and AD can be also performed by atransfer mold method as an alternative to the above-described pottingmethod. In this case, the bump electrodes 4 of the chip MF and the leads5 a of the tape carrier 2 a are first respectively electricallyconnected to one another in accordance with the aforementioned method,and the bump electrodes 4 of the chip AD and the leads 5 b of the tapecarrier 2 b are next respectively electrically connected to one another,as shown in FIG. 41.

Next, the chips MF and AD are sealed with a mold resin 17 as shown inFIG. 42. In order to seal the respective chips MF and AD, the tapecarriers 2 a and 2 b are mounted to their corresponding molding dies anda plurality of chips MF and AD are respectively collectively sealed inmultiple form. An epoxy resin is used as the mold resin 17.

The whole surfaces of the chips MF and AD are covered with the moldresin 17 in the illustrated example. However, the backs of the chips MFand AD may be set to such a structure as to be exposed from the moldresin 17. In that case, the normal transfer mold method is not utilized.That is, a resin processed in sheet form is applied to the uppersurfaces of the tape carriers 2 a and 2 b and heated and pressed underpressure, whereby the resin may be poured into the main surfaces andsides of the chips MF and AD. However, this method needs to control theamount of casting of the resin with high accuracy so that the resin doesnot overflow from the upper surfaces of the tape carriers 2 a and 2 b.

In the package according to the present invention, the thickness of themold resin 17 for sealing the chips MF and AD therewith is extremelythin. Thus, when the reverse sides of the chips MF and AD are exposedfrom the mold resin 17 and when there are differences between thethicknesses of the mold resins 17 formed over the main surfaces andbacks of the chips MF and AD in a structure in which the whole surfacesof the chips MF and AD are covered with the mold resin 17, warpageoccurs in the TCP1A and TCP1B if there is a difference in thermalexpansion coefficient between each of the chips MF and AD and the moldresin 17, thereby causing chip cracks and connection failures atsubstrate implementation. It is thus necessary to select as the moldresin 17, a material low in thermal expansion coefficient and whosethermal expansion coefficient is close to the thermal expansioncoefficients of the chips MF and AD.

Next, the tape carriers 2 a and 2 b are divided into pieces by a cuttingdie. Each individual TCP1A and TCP1B are subjected to an aging test tothereby select good products or items. Thereafter, the tape carriers 2 aand 2 b are superimposed on one another so that opposed through holes 8a and 8 b coincide in position with each other as shown in FIG. 43.Further, the so-superimposed tape carriers 2 a and 2 b are heated andpressed under pressure to thereby join the two with an adhesive 10.Afterwards, solder 11 is formed inside the through holes 8 a and 8 b inaccordance with the aforementioned method. Further, solder bumps 9 areformed at one ends of the through holes 8 a of the tape carrier 2 a,whereby the corresponding stacked TCP is completed. Alternatively, aTCP1A and a TCP1B may be stacked on each other so as to be combined intoone package after the solder 11 hag been charged into the through holes8 a of the TCP1A and the through holes 8 b of the TCP1B as shown in FIG.44.

Both chips MF and AD may be simultaneously collectively sealed with amold resin 17. In this case, as shown in FIG. 45, bump electrodes 4 ofthe chip MF and leads 5 a of a tape carrier 2 a are respectivelyelectrically connected to one another in accordance with theaforementioned method, and bump electrodes 4 of the chip AD and leads 5b of a tape carrier 2 b are respectively electrically connected to oneanother. Thereafter, the tape carriers 2 a and 2 b are superimposed onone another and heated and pressed under pressure, whereby the two arejoined each other with an adhesive 10. Next, the chips MF and AD aresimultaneously sealed with the mold resin 17 as shown in FIG. 46.Thereafter, the solder 11 is formed inside the through holes 8 a and 5 baccording to the aforementioned method and the solder bumps 9 are formedat one ends of the through holes 8 a of the tape carrier 2 a, as shownin FIG. 47.

According to the above-described method of sealing the chips MF and ADwith the mold resin 17, the accuracy of the outside dimension of eachsealed portion is improved as compared with the method of sealing thechips MF and AD with the potting resin 6. It is therefore possible tomanufacture a multilayered or stacked TCP high in dimension stabilityand uniform in shape. Further, a sealing time interval can be shortenedby collectively sealing a plurality of chips MF and MD in multiple form.Moreover, since no clearance is defined between the TCP1A and TCP1B bysetting the thickness of the mold resin 17 so as to be identical to thethicknesses of the tape carriers 2 a and 2 b, it is possible to preventmalfunctions such as gathering of moisture between the TCP1A and TCP1B,etc. and hence manufacture a multilayered TCP high in reliability.

The multilayered TCP according to the present invention may adopt amethod of forming the external connecting terminals with the leads 5 aand 5 b as an alternative to the method of forming the externalconnecting terminals with the solder bumps 9. A method of manufacturingthe present multilayered TCP will be explained with reference to FIGS.48 through 53.

Tape carriers 2 a and 2 b each composed of a polyimide film are firstpunched to define a device hole 3 a in the tape carrier 2 a and define adevice hole 3 b in the tape carrier 2 b as shown in FIG. 48. Theabove-described through holes 8 a and 8 b are not defined in these tapecarriers 2 a and 2 b.

Next, as shown in FIG. 49, the leads 5 a are formed on the tape carrier2 a and leads 5 b are formed on the tape carrier 2 b in accordance withthe aforementioned method. The surfaces of one ends (inner leadportions) of these leads are given Au or Sn plating. Thereafter, asolder resist 7 is placed over the whole surface of the tape carrier 2 aand an adhesive 10 is bonded to the whole surface of the tape carrier 2b. The leads 5 a and 5 b are formed to such lengths as to be able toutilize their other ends (outer lead portions) as external connectingterminals.

Next, as shown in FIG. 50, bump electrodes 4 of a chip MF and the leads5 a of the tape carrier 2 a are electrically connected to one anotherand bump electrodes 4 of a chip AD and the leads 5 b of the tape carrier2 b are electrically connected to one another, in accordance with theaforementioned method. Thereafter, the chips MF and AD are sealed with apotting resin 6. Subsequently, the tape carriers 2 a and 2 b are broughtinto pieces or fractions and each individuals TCP1A and TCP1B aresubjected to an aging test to thereby select good products or items.

Next, as shown in FIG. 51, the tape carriers 2 a and 2 b aresuperimposed on one another to join together in accordance with theaforementioned method, whereby the TCP1A and TCP1B are brought into onepackage. Thereafter, the tape carriers 2 a and 2 b supporting the otherends (outer lead portions) of the leads 5 a and 5 b are cut and removedas shown in FIG. 52.

Next, the surfaces of the other ends (outer lead portions) of the leads5 a and 5 b are given solder plating. Thereafter, the other ends (outerlead portions) of the leads 5 a and 5 b are shaped into galwing form byusing lead molding dies. The leads 5 a and 5 b are simultaneously formedby using the same dies.

In order to implement the multilayered TCP manufactured in this way in aprinted wiring board, the other ends (outer lead portions) of the leads5 a and 5 b are superimposed on their corresponding electrodes 15 of theprinted wiring board 14 and solder plating is caused to reflow, as shownin FIG. 54. At this time, the leads 5 a and 5 b electrically connectedto their corresponding connecting terminals shared between the two chipsMF and AD are respectively electrically connected to the same electrodes15 of the printed wiring board 14. That is, the present stacked TCP hasa structure wherein the connecting terminals common to the two chips MFand AD are electrically connected to one another through the leads 5 aand 5 b and commonly drawn to the outside (printed wiring board) throughthe leads 5 a and 5 b.

While the illustrated multilayered TCP is placed with the main surfacesof the chips MF and AD directed upward, it may be placed with theirsurfaces directed downward. While the chips MF and AD are sealed withthe potting resin 6, they may be sealed with a mold resin 17 as shown inFIG. 55.

According to the stacked TCP of such a type that the external connectingterminals are respectively formed by the leads 5 a and 5 b, amanufacturing process can be simplified as compared with the stacked TCPwherein the external connecting terminals are formed by the solder bumps9. It is therefore possible to reduce the manufacturing cost of thepresent stacked TCP. Further, since it is also unnecessary to define thethrough holes 8 a and 8 b in the tape carriers 2 a and 2 b, the routingof the leads 5 a and 5 b becomes easy and the tape carriers 2 a and 2 bcan be also reduced in manufacturing cost.

Further, the leads 5 a of the tape carrier 2 a and the leads 5 b of thetape carrier 2 b are simultaneously formed with the same dies, therebymaking it possible to shorten the time required to form the externalconnecting terminals. By electrically connecting the other ends (outerlead portions) of the leads 5 a and 5 b to their correspondingelectrodes 15 of the printed wiring board 14 by superposition, the areaof each electrode 15 taken on the surface of the printed wiring board 14can be reduced and implementations (connections between the leads 5 aand 5 b and the electrodes 15) of the stacked TCP can be performed atone time.

The leads 5 a and 5 b constituting the external connecting terminals maybe individually formed by using two dies. Even in this case, the leads 5a and 5 b electrically connected to their corresponding connectingterminals shared between the two chips MF and AD are respectivelyelectrically connected to the same electrodes 15 of the printed wiringboard 14 as shown in FIG. 56 (showing a structure wherein chips MF andAD are sealed with a potting resin 6) and FIG. 57 (showing a structurewherein chips MF and AD are sealed with a mold resin 17).

In a multilayered TCP shown in FIG. 58, the other ends (outer leadportions) of leads 5 a formed at a TCP1A corresponding to a lower layerare shaped into galwing form to form external connecting terminals.Electrical connections between TCP1A and TCP1B are made via solder 11embedded inside through holes 8 a and 8 b defined in tape carriers 2 aand 2 b.

Since stresses applied to connecting portions between the stacked TCPand a printed wiring board due to the difference in thermal expansioncoefficient between the two are accommodated and lightened bydeformations of flexible leads, the above-described structure of such atype that the external connecting terminals are respectively formed bythe leads shaped into the galwing form, provides high reliability forthe connection with the substrate as compared with the structure whereinthe external connecting terminals are respectively formed by the solderbumps.

In the package according to the present invention, a TCP1A and a TCP1Bcan be also implemented individually in a printed wiring board 14 asshown in FIG. 59 without bringing them into one package. In this case,the present package is reduced in packing density as compared with thestacked TCP wherein the TCP1A and TCP1B are brought into one package.However, since a process for stacking the TCP1A and TCP1B on each otherso as to be brought into one package becomes unnecessary, the packagecan be reduced in manufacturing cost.

In the multilayered TCP according to the present invention, externalconnecting terminals can be also formed by pins 18 used in a PGA (PinGrid Array) type package as shown in FIG. 60 as an alternative to themethod of forming the external connecting terminals by the solder bumps9 and the leads 5 a and 5 b. The surfaces of the pins 18 are givenplating using Sn (tin) or the like. Thus, the pins 18 are electricallyconnected to their corresponding leads 5 a and/or leads 5 b insidethrough holes 8 a and 8 b.

Further, the stacked TCP according to the present invention can alsoprovide electrical connections between the chip MF and the leads 5 a andbetween the chip AD and the leads 5 b by means of anisotropic conductivefilms.

In order to manufacture the stacked TCP using the anisotropic conductivefilms, first of all, a device hole 3 a, through holes 8 a and leads 5 aare formed in a tape carrier 2 a, and a device hole 3 b, through holes 8b and leads 5 b are formed in a tape carrier 2 b in accordance with theaforementioned method as shown in FIG. 61. Thereafter, a solder resist 7is placed on the whole surface of the tape carrier 2 a and an adhesive10 is applied onto the whole surface of the tape carrier 2 b.

Next, as shown in FIG. 62, an anisotropic conductive film 19 a cut tosubstantially the same size as that of the device hole 3 a of the tapecarrier 2 a in advance is positioned onto one ends (inner lead portions)of the leads 5 a which protrude inside the device hole 3 a. Similarly,an anisotropic conductive film 19 b cut to substantially the same sizeas that of the device hole 3 b of the tape carrier 2 b in advance ispositioned onto one ends (inner lead portions) of the leads 5 b whichprotrude inside the device hole 3 b.

Next, as shown in FIG. 63, a chip MF with bump electrodes 4 formedthereon is positioned onto the anisotropic conductive film 19 a with themain surface of the chip MF directed downward and thereafter theanisotropic conductive film 19 a is heated and pressurized, whereby thebump electrodes 4 and the leads 5 a are respectively electricallyconnected to one another via conductive particles in the anisotropicconductive film 19 a. Similarly, a chip AD with bump electrodes 4 formedthereon is positioned onto the anisotropic conductive film 19 b with themain surface of the chip AD directed downward and thereafter theanisotropic conductive film 19 b is heated and pressurized, whereby thebump electrodes 4 and the leads 5 b are respectively electricallyconnected to one another via conductive particles in the anisotropicconductive film 19 b. Subsequently, the tape carriers 2 a and 2 b arebrought into pieces and each individual TCP1A and TCP1B are subjected toan aging test to thereby select good products or items.

Next, the tape carriers 2 a and 2 b are superimposed on one another soas to be brought into one package in accordance with the above-describedmethod as shown in FIG. 64. Thereafter, solder 11 is charged into thethrough holes 8 a and 8 b and solder bumps 9 are formed at one ends ofthe through holes 8 a, as shown in FIG. 65.

It is needless to say that the above-described various stacked TCPaccording to the present invention can be applied even toconfigurational examples such as the above-described chip MFA+chip D,chip MFA+chip AD, chip MF+chip D, etc. as well as a combination of thechip MF+chip AD. Further, the stacked TCP according to the presentinvention can be applied even to the case in which three or more chipsare layered.

A stacked TCP shown in FIG. 66 has a stacked TCP structure wherein achip MF with a microcomputer and a flash memory formed therein is sealedinto or with a TCP1A and two chips D₁ and D₂ with only DRAMs formedtherein are respectively sealed into or with two TCP1C and TCP1D, andthese three TCP1A, TCP1C and TCP1D are superimposed on one another in avertical direction so as to be integrally joined together.

The chip MF sealed with the TCP1A corresponding to the lowest layer isplaced within a device hole 3 a of a tape carrier 2 a with its mainsurface (device forming surface) directed upward. The chip MF iselectrically connected to one ends (inner lead portions) of leads 5 aformed over the whole surface of the tape carrier 2 a via bumpelectrodes 4 formed at a peripheral portion of the main surface thereof.The chip MF is sealed with a mold resin 17. The leads 5 a formed overthe whole surface of the tape carrier 2 a have patterns shown in FIG. 67respectively.

The TCP1C, which has sealed the chip D₁, is layered at an upper portionof the TCP1A. Further, the TCP1D, which has sealed the chip D₂, islayered at an upper portion of the TCP1C. The chip D₁ sealed with theTCP1C is placed within a device hole 3 c defined in a central portion ofa tape carrier 2 c with its principal surface directed upward. Further,the chip D₁ is electrically connected to one ends (inner lead portions)of leads 5 c formed over the whole surface of the tape carrier 2 c viabump electrodes 4 formed in a central portion of its principal surface.Similarly, the chip D₂ sealed by the TCP1D is placed within a devicehole 3 d defined in a central portion of a tape carrier 2 d with itsprincipal surface directed upward. Further, the chip D₂ is electricallyconnected to one ends (inner lead portions) of leads 5 d formed overwhole surface of the tape carrier 2 d via bump electrodes 4 formed in acentral portion of its principal surface. These chips D₁ and D₂ are alsosealed with the mold resin 17. The leads 5 c formed over the wholesurface of the tape carrier 2 c have patterns shown in FIG. 68respectively. The leads 5 d formed over the whole surface of the tapecarrier 2 d have patterns shown in FIG. 69 respectively.

The present stacked TCP takes a structure wherein connecting terminals(pins) shared (i.e, which have the same functions) between the threechips MF, D₁ and D₂ are electrically connected to one another viathrough holes 8 a, 8 c and 8 d placed in the same positions of the tapecarriers 2 a, 2 c and 2 d, and are drawn in common to the outside(printed wiring board) through the other ends (outer lead portions) ofthe leads 5 a formed on the tape carrier 2 a. It is needless to say thatthe external connecting terminals can be formed by the above-describedsolder bumps or pins or the like in addition to the leads.

Numbers (1 through 144) of the connecting terminals formed in the chipMF and numbers (1 through 144) of the through holes 8 a defined in thetape carrier 2 a are assigned to FIG. 67. Further, numbers (1 through46) of the connecting terminals formed in the chip D₁ and numbers (1through 144) of the through holes 8 c defined in the tape carrier 2 care assigned to FIG. 68. Numbers (1 through 46) of the connectingterminals formed in the chip D₂ and numbers (1 through 144) of thethrough holes 8 d defined in the tape carrier 2 d are assigned to FIG.69. The through holes 8 a, 8 c and 8 d placed in the same positions ofthe tape carriers 2 a, 2 c and 2 d are identified by the same numbers.

When both the areas of the chip D₁ and D₂ are less than or equal toone-half the area of the chip MF, the chips D₁ and D₂ are transverselyplaced side by side and the connecting terminals shared between the chipD₁ and D₂ can be connected to each other by a common lead 5 e, as shownin FIG. 70. In doing so, an ultra-thin package can be implemented in amanner similar to the above-described stacked TCP equipped with the twochips MF and AD.

The package according to the present invention is not limited to theabove-described structure. Various engineering changes can be made toits details. As shown in FIG. 71 by way of example, the package can alsoadopt a structure in which a chip MF sealed with a TCP1A and leads 5 aformed on a tape carrier 2 a are electrically connected by wires 20composed of Au.

As shown in FIG. 72 by way of example except the stacked TCP structure,chips MF and AD are individually sealed into QFP (Quad Flat package)type packages without being brought into one package and thereafter theycan be also implemented to a printed wiring board 14.

The package according to the present invention is used in multimediadevices, devices such as information electrical appliances, systems,e.g., a car navigation system shown in FIG. 73, a CD-ROM (Compact DiskROM) driving device shown in FIG. 74, a game device shown in FIG. 75, aPDA (Personal Digital Assistance) shown in FIG. 76, a mobilecommunication device shown in FIG. 77, etc. Their outlines will beexplained below.

FIG. 73 is a functional block diagram showing an example of an internalconfiguration of a car navigation system. The car navigation systemcomprises a controller, a display unit electrically connected to thecontroller, a GPS and a CD-ROM. The controller comprises a main CPU, aprogram EPROM (4 M), a work RAM (SRAM: 1M), an I/O control circuit, anARTOP, an image RAM (DRAM: 4M), a CG (Computer Graphics) ROM (mask ROM:4M), a gate array, etc.

Further, the display unit comprises a slave microcomputer, a TFT, etc.

In the car navigation system, the main CPU of the controller controlsperforms control in accordance with control programs stored in theprogram EPROM. First of all, the controller receives therein positioninformation obtained from the GPS for measuring the position of eachvehicle between a satellite and each ground station, and map informationstored in the CD-ROM through the I/O control circuit and the gate arrayand causes the work RAM to store these information therein.

The ARTOP performs, for example, a process for placing each vehicleposition on a map, based on the position information and map informationstored in the word RAM in accordance with a processing program stored inthe CG ROM. Image or pictorial information obtained from the ARTOP isstored in the image RAM. Thereafter, the pictorial information stored inthe image RAM is transferred to the display unit where the imageinformation is displayed on the TFT-based screen under the control ofthe slave microcomputer, whereby an image indicative of each vehicleposition placed on the map can be displayed thereon.

In the car navigation system, the main CPU, the program EPROM, and theARTOP or the like are comprised of a processor, a flash memory, anASIC-based logic circuit and the like respectively. Thus, the chip MFAaccording to the present embodiment can be used for each block portionreferred to above. Further, the image RAM is comprised of a DRAM and thegate array is comprised of an ASIC-based logic circuit. Thus, the chipAD according to the present embodiment can be used for each blockportion referred to above. Further, the chip MF and the chip D may besimply used for portions such as the main CPU and the program EPROM anda portion corresponding to the image RAM respectively.

FIG. 74 is a functional block diagram showing an example of an internalconfiguration of the CD-ROM driving device. The CD-ROM driving devicecomprises a microcomputer including a flash memory, a preservo circuitbidirectionally electrically connected to the microcomputer, a signalprocessing circuit, a ROM decoder, a host I/F, a pickup bidirectioanallyelectrically connected to the preservo circuit and the signal processingcircuit respectively, an SRAM, a D/A electrically connected to the ROMdecoder, a buffer RAM electrically connected to the host I/F, etc.

A motor M for driving the CD-ROM is electrically connected to the signalprocessing circuit. A signal in the CD-ROM is read by the pickup. Therotation of the motor is controlled by signals produced from thepreservo circuit and the signal processing circuit. Further, a speakeris electrically connected to the D/A. The present CD-ROM driving deviceis electrically connected to a host computer through the host I/F.

In the CD-ROM driving device, the signal of the CD-ROM is read by thepickup under the control of the microcomputer. The read signalinformation is processed by the signal processing circuit. Theso-processed information is stored in the SRAM. Further, the informationstored in the SRAM is decoded by the ROM decoder, which in turn isconverted into an analog signal by the D/A, after which it can beoutputted from the speaker and is temporarily stored in the buffer RAM.Thereafter, the so-processed signal can be outputted to the hostcomputer through the host I/F.

In the CD-ROM driving device, the chip MFA according to the presentembodiment can be used for each individual block portions such as themicrocomputer including the flash memory, the signal processing circuit,etc. Further, the chip AD according to the present embodiment can beused for each individual block portions such as the buffer RAM and thehost I/F. The chip MF and the chip D may be simply used for portionssuch as the microcomputer including the flash memory, and the buffer RAMrespectively.

FIG. 75 is a functional block diagram showing an example of an internalconfiguration of the game device.

The game device comprises a body controller, a speaker electricallyconnected to the body controller, a CD-ROM, a ROM cassette, a displayRAM (SDRAM: 4M) to which a CRT is connected, a buffer RAM (DRAM: 4M),and a keyboard.

The body controller comprises a main CPU, a system ROM (mask ROM: 16M),a DRAM (SDRAM: 4M), a RAM (SRAM: 256 k), a sound processor, a graphicsprocessor, a moving-picture compressing processor, an I/O controlcircuit, etc.

In the game device, the main CPU of the body controller performs controlin accordance with control programs stored in the system ROM. The mainCPU receives picture/voice information stored in the CD-ROM and ROMcassette and instruction information inputted via the keyboard throughthe I/O control circuit respectively and causes the DRAM and RAM tostore these information therein.

The respective information stored in the DRAM and RAM are respectivelyprocessed into audio and video signals by the sound processor andgraphics processor. The audio signal is outputted as the voice throughthe speaker, whereas the video signal is temporarily stored in thedisplay RAM, after which it can be displayed on the screen of the CRT asan image. At this time, the amount of information about the video signalis compressed by the moving-picture compressing processor and theso-compressed information is stored in the buffer RAM and usedtherefrom.

In the game device, the chip MFA according to the present embodiment canbe used for each individual block portions such as the main CPU, systemROM, sound processor, graphics processor, etc. Further, the chip ADaccording to the present embodiment can be used for each individualblock portions such as the DRAM, moving-picture compressing processor,etc. The chip MF may be simply used for portions such as the main CPUand system ROM and the chip D may be simply used for portions such asthe DRAM, RAM, buffer RAM, etc.

FIG. 76 is a functional block diagram showing an example of an internalconfiguration of a PDA. The PDA comprises a microcomputer including aflash memory, which comprises a graphics control circuit, a handwritinginput circuit, a memory control circuit, a security management circuitand a communication control circuit, an LCD electrically connected tothe graphics control circuit of the microcomputer, a digitizerelectrically connected to the handwriting input circuit through an A/D,a system memory (mask ROM: 16M) electrically connected to the memorycontrol circuit, an IC card electrically connected to the securitymanagement circuit, an IR-IF and a RS-232C electrically connected to thecommunication control circuit, and a PCMCIA card provided through aPCMCIA control circuit. The present microcomputer is electricallyconnected to a PHS, a GSM, an ADC, etc. through a network from thecommunication control circuit.

The PDA is controlled by the memory control circuit in accordance with acontrol program stored in the system memory. Information written withthe digitizer is converted to a digital signal by the A/D, which in turnis stored in the handwriting input circuit. The information stored inthe handwriting input circuit is subjected to signal processing by thegraphics control circuit and thereafter the so-processed signal can bedisplayed on the screen of the LCD. In addition to this display,information about communications with the outside, security managementinformation, etc. can be displayed on the screen of the LCD through thegraphics control circuit.

Further, communications with the PHS, GSM, ADC, etc. can be performedunder the control of the communication control circuit through thenetwork. Information outputted from the PCMCIA card or the like throughthe PCMCIA control circuit can be brought into the microcomputer.Moreover, information inputted from the IC card is used for securitymanagement of the security management circuit.

In the PDA, the chip MFA according to the present embodiment can be usedfor a block portion corresponding to the microcomputer including theflash memory, which comprises the graphics control circuit, handwritinginput circuit, memory control circuit, security management circuit andcommunication control circuit. Further, the chip D may simply be usedfor portions such as the graphics control circuit, the handwriting inputcircuit, etc.

FIG. 77 is a functional block diagram showing an example of an internalconfiguration of the mobile communication device. The mobilecommunication device comprises a CPU including a flash memory, a CHcodec electrically connected to the CPU, an LCD controller/driver, an ICcard, an RF/IF electrically connected to the CH codec through a modem, aspeech codec, and an LCD electrically connected to the LCDcontroller/driver. An antenna is electrically connected to the RF/IF anda speaker and a microphone are electrically connected to the speechcodec, respectively.

The mobile communication device is controlled by a program stored in theflash memory of the CPU. Upon signal reception, the mobile communicationdevice receives a signal inputted from the antenna via the RF/IF andmodulates it using the modem. Further, the modulated signal is convertedto a speech signal by using the CH codec and the speech codec, afterwhich the so-converted signal can be outputted through the speaker asthe voice.

Upon signal transmission, the mobile communication device converts aspeech signal inputted via the microphone to another form by using thespeech codec and the CH codec. After the so-converted signal has beendemodulated by the modem, the demodulated signal can be transmitted fromthe antenna through the RF/IF.

In the mobile communication device, the chip MFA according to thepresent embodiment is used for each individual block portions such asthe CPU, CH codec, etc. The chip AD according to the present embodimentcan be used for each individual portions such as the LCDcontroller/driver, etc. The chip MF may be simply used for a CPUportion.

As described above, the semiconductor device comprised of thecombinations of the chips MF, MFA, AD, D etc. according to the presentembodiment can be widely applied to the multimedia devices such as thecar navigation system, CD-ROM driving device, game device, PDA, mobilecommunication device, etc., the devices such as the information homeappliances or the like, a system, etc.

Thus, according to the present invention, the following advantageouseffects can be obtained.

(1) Since a package structure wherein two types of chips correspondingto a chip MF based on a CPU and a flash memory or the like and a chip Dbased on a DRAM are brought into one package, is adopted in terms ofcircuital costs, the number of external connecting terminals can bereduced and a reduction in mounting packing areas owing to theintegration of the two types of chips into one package can be achieved,whereby the cost down to the semiconductor device can be achieved.Further, an apparatus, a system, etc. each using the presentsemiconductor device can be also reduced in cost.

(2) When a chip MFA and a chip AD are adopted wherein a logic circuitsuch as an ASIC or the like is incorporated in chips MF and Drespectively, and a DRAM is used as a synchronous DRAM, externalconnecting terminals can further be set in common. Therefore, the numberof external connecting terminals is still further reduced so that thecost down can be achieved.

(3) In terms of a circuital operation, the need for wait control can beeliminated by using a chip AD equipped with a DRAM and a logic circuitsuch as an ASIC, and an access operation to the DRAMA from the logiccircuit can be performed during a self-refresh period of the DRAM asviewed from the outside. Therefore, the transfer of data between theoutside and the chip AD can be speeded up.

Since a CPU need not perform wait-signal exchanges in particular becausethe CPU itself controls time so as to achieve one clock cycle, ahigh-speed access can be performed. Further, the processing made to anapparatus, a system, etc. using the present semiconductor device can bespeeded up.

(4) Even in the case of a package structure wherein two types of chipscorresponding to a chip AD equipped with a DRAM and a logic circuit, andchips MF and MFA each equipped with a CPU, a flash memory, etc. arebrought into one package, an access operation to the DRAM from the logiccircuit can be performed during a self-refresh period of the DRAM asviewed from the CPU. Therefore, the transfer of data between the chip ADand the chip MF and between the chip AD and the chip MFA can be speededup.

(5) Since wait control used to perform wait-signal exchanges becomesunnecessary, timing provided for processing itself can be controlledfrom the CPU. That is, since the timing itself provided to performprocessing can be recognized from within each program set to the CPU, itis possible to easily create programs for the semiconductor device.

(6) The use of a general-purpose DRAM interface makes it possible todirectly connect a chip AD equipped with a DRAM and a logic circuit andchips MF and MFA each equipped with a CPU, a flash memory, etc. to oneanother so as to be operable at high speed.

(7) Since a DRAM, logic, a flash memory, etc. different in power levelfrom one another are formed in parts as two or more chips so as toreduce a load on a process, the manufacturing cost of each chip can begreatly reduced as compared with the case in which these are formed inmixed form as one chip.

(8) Two types of chips corresponding to a chip MF based on a CPU and aflash memory or the like and a chip D based on a DRAM are installed inan ultra-thin stacked package so as to take on one package, whereby thepacking area of each chip can be greatly reduced.

While the present invention which has been made by the presentinventors, has been described specifically based on the illustrativeembodiments of the invention, the present invention is by no meanslimited to the above-described embodiments. It is needless to say thatvarious changes can be made thereto within the scope departing from thesubstance of the invention.

INDUSTRIAL APPLICABILITY

As described above, the semiconductor device according to the presentinvention has a package structure wherein from an MCM-based approach, aplurality of types of semiconductor chips such as a first chip in whicha flash memory and a logic circuit such as an ASIC or the like areformed in a microcomputer including a CPU, one or a plurality of secondchips in which a DRAM and a logic circuit such as an ASIC or the likeare formed, are accommodated or held inside the same package so thatsignals can be input and outputted. This type of package structure isuseful for a semiconductor device capable of reducing the number ofexternal connecting terminals, achieving a reduction in the packing areaowing to the integration of two types of chips into one package, andallowing the cost down even from the circuital standpoint of afunctional block configuration. Further, the present invention can bewidely applied to multimedia devices, devices such as an informationhome appliance or the like, a system, etc. each using the presentsemiconductor device.

What is claimed is:
 1. A semiconductor device comprising: an insulatingbase having a first surface and a second surface opposite to said firstsurface; a first semiconductor chip having a flash memory circuit andfirst connection terminals formed on a main surface of said firstsemiconductor chip, said first semiconductor chip being disposed on saidfirst surface of said insulating base; a second semiconductor chiphaving a random access memory circuit and second connection terminalsformed on a main surface of said second semiconductor chip, said secondsemiconductor chip being stacked on said first semiconductor chip; bumpelectrodes disposed on said second surface of said insulating base;first conductors electrically connecting said first connection terminalsof said first semiconductor chip with said bump electrodes; secondconductors electrically connecting said second connection terminals ofsaid second semiconductor chip with said bump electrodes; and a moldresin sealing said first and second semiconductor chips.
 2. Asemiconductor device according to claim 1, wherein said flash memorycircuit of said first semiconductor chip includes a plurality oftransistors each including a floating gate electrode and a control gateelectrode stacked on said floating gate electrode, and source and drainregions formed at two sides of said floating gate electrode.
 3. Asemiconductor device according to claim 2, wherein said firstsemiconductor chip further includes a microcomputer system formed onsaid main surface thereof.
 4. A semiconductor device according to claim2, wherein said random access memory circuit of said secondsemiconductor chip includes a plurality of MOS transistors eachincluding a capacitor coupled to one of source and drain regionsthereof.
 5. A semiconductor device according to claim 1, wherein a sizeof said first semiconductor chip is larger than that of said secondsemiconductor chip in a plan view.
 6. A semiconductor device accordingto claim 5, wherein said main surface of said first semiconductor chiphas a tetragonal shape, and wherein said first connection terminals arearranged along four sides of said tetragonal shape.
 7. A semiconductordevice according to claim 6, wherein each of said first conductorsincludes a bonding wire and a wiring layer which is formed on saidinsulating base and is connected to one end of said bonding wire.
 8. Asemiconductor device according to claim 7, wherein said insulating basehas through holes extending from said first surface to said secondsurface, and wherein said bump electrodes are electrically connected tosaid wiring layers via said through holes.
 9. A semiconductor deviceaccording to claim 1, wherein said insulating base is formed of apolyimide tape.